Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer
US-11788201-B2 · Oct 17, 2023 · US
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by induction, e.g. hot wire technique (C30B13/18 takes precedence)
by induction, e.g. hot wire technique (C30B13/18 takes precedence) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B13/20 |
| Official title | by induction, e.g. hot wire technique (C30B13/18 takes precedence) |
| Display label | by induction, e.g. hot wire technique (C30B13/18 takes precedence) |
| Total patents | 24 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 4 |
| 2016 | 3 |
| 2017 | 3 |
| 2018 | 5 |
| 2019 | 2 |
| 2020 | 2 |
| 2021 | 4 |
| 2023 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer
US-2021222319-A1 · Jul 22, 2021 · US
Method and apparatus for pulling a single crystal by the FZ method
US-11021808-B2 · Jun 1, 2021 · US
Method for pulling a single crystal by the FZ method comprising reducing the power of a melting apparatus based on geometrical dimensions of the drop
US-10988856-B2 · Apr 27, 2021 · US
Method for pulling a single crystal by the FZ method comprising dynamically adapting the power of a melting apparatus based on a position of lower and upper phase boundaries
US-10907271-B2 · Feb 2, 2021 · US
Method and apparatus for pulling a single crystal by the fz method
US-2020149183-A1 · May 14, 2020 · US
Method and apparatus for pulling a single crystal by the fz method
US-2020141025-A1 · May 7, 2020 · US
Method and apparatus for pulling a single crystal by the fz method
US-2019352795-A1 · Nov 21, 2019 · US
Method for tailoring the dopant profile in a laser crystal using zone processing
US-10273595-B2 · Apr 30, 2019 · US
Method for tailoring the dopant profile in a laser crystal using zone processing
US-2018245236-A1 · Aug 30, 2018 · US
Method for the thermal treatment of granular material composed of silicon, granular material composed of silicon, and method for producing a monocrystal composed of silicon
US-2018194633-A1 · Jul 12, 2018 · US
Method for growing a single crystal by crystallizing the single crystal from a float zone
US-9932691-B2 · Apr 3, 2018 · US
Device for producing a monocrystal by crystallizing said monocrystal in a melting area
US-9932690-B2 · Apr 3, 2018 · US
Method for tailoring the dopant profile in a laser crystal using zone processing
US-9926644-B2 · Mar 27, 2018 · US
Apparatus and process for producing a single crystal of silicon
US-9828692-B2 · Nov 28, 2017 · US
Apparatus and process for producing a crystal of semiconductor material
US-9828693-B2 · Nov 28, 2017 · US
Electromagnetic casting method and apparatus for polycrystalline silicon
US-9553221-B2 · Jan 24, 2017 · US
Method and apparatus for producing a single crystal
US-9422634-B2 · Aug 23, 2016 · US
Method for producing a silicon single crystal
US-9410262-B2 · Aug 9, 2016 · US
Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone
US-2016177469-A1 · Jun 23, 2016 · US