Device for producing a monocrystal by crystallizing said monocrystal in a melting area

Patent metadata

Field	Value
Publication number	US-9932690-B2
Application number	US-201314417967-A
Country	US
Kind code	B2
Filing date	Jul 1, 2013
Priority date	Aug 2, 2012
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater which surrounds and applies thermal radiation to the crystallizing single crystal, and a separating bottom which delimits downward an intermediate space between the reheater and a wall of the housing at a lower end of the reheater.

First claim

The invention claimed is:

1. A device for producing a single crystal by crystallizing the single crystal in a melt zone, comprising a housing, an inductor for generating heat in the melt zone, a reheater below the melt zone which surrounds and applies thermal radiation to the crystallizing single crystal, the single crystal crystallizing below the melt zone, and a separating bottom which delimits an intermediate space between the reheater and a wall of the housing downward at a lower end of the reheater, wherein barriers are arranged on outer sides of the separating bottom to shorten or close gaps between the reheater and the separating bottom and between the separating bottom and the wall of the housing.

2. The device of claim 1 , wherein the reheater is a reflector.

3. The device as claimed in claim 1 , wherein the reheater is an active radiating heater.

4. The device of claim 1 , wherein an upper edge of the reheater lies at the level of a triple point of a crystallization boundary.

5. The device of claim 4 , wherein the reheater has an axial length which is not larger than 1.5 times a diameter of the single crystal produced.

6. The device of claim 1 , wherein the barriers arranged on outer sides of the separating bottom between the separating bottom and the wall of the housing are constructed of steel.

7. The device of claim 1 , wherein the barriers arranged between the outer sides of the separating bottom and the reheater are constructed of silver or quartz glass.

8. The device of claim 1 , wherein the barriers reduce or eliminate convective flow of gas to the melt zone.

Assignees

• Siltronic Ag

Inventors

• Raming Georg
• Altmannshofer Ludwig

Classifications

• C30B13/30

  Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal · CPC title

• C30B29/06

  Silicon · CPC title

• C30B13/16

  Heating of the molten zone · CPC title

• Y10T117/1088

  including heating or cooling details · CPC title

• C30B35/00

  Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title