Method and apparatus for pulling a single crystal by the FZ method

Patent metadata

Field	Value
Publication number	US-11021808-B2
Application number	US-201816474875-A
Country	US
Kind code	B2
Filing date	Feb 13, 2018
Priority date	Feb 15, 2017
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

FZ single crystals are pulled by melting a polycrystal with electromagnetic melting apparatus and then recrystallizing. First, a lower end of the polycrystal is melted; second, a monocrystalline seed is attached to the lower end of the polycrystal and melted beginning from an upper end thereof; third, between a lower section of the seed and the polycrystal, a thin neck is formed whose diameter (dD) is smaller than that (dI) of the seed; and fourth, between the thin neck section and the polycrystal, a conical section is formed. Before the conical growth, a switchover position (h′) of the polycrystal, the position at which the rate of polycrystal movement relative to the melting apparatus is to be reduced is determined, and the rate is reduced, in amount when the switchover position (h′) is reached.

First claim

The invention claimed is:

1. A method for pulling a single crystal by the FZ method, in which a polycrystal having a conical section at its lower end is melted by means of an electromagnetic melting apparatus and then recrystallized, comprising:
a) in a first phase (P 1 ) melting a lower end of the polycrystal by means of the melting apparatus;
b) in a second phase (P 2 ) attaching a monocrystalline seed to the lower end of the polycrystal and melting the monocrystalline seed beginning from an upper end of the seed;
c) in a third phase (P 3 ) forming a thin neck section between a lower section of the seed and the polycrystal, the diameter (d D ) of the thin neck section being smaller than that (d I ) of the seed; and
d) in a fourth phase (P 4 ) forming a conical section of the single crystal between the thin neck section and the polycrystal, and
e) before the fourth phase (P 4 ) is reached, determining a switchover position (h′) of the polycrystal, the switchover position being a position, at which a rate with which the polycrystal is moved relative to the melting apparatus is to be reduced in amount, the switchover position (h′) determined by either
e)i) measuring a distance (d) of a location (P S ) characteristic of the polycrystal and situated at the lower end of a conical section of the polycrystal relative to a fixed reference point (P B ), the switchover position (h′) determined from the distance (d), or
e)ii) determining an intermediate position (h) of the polycrystal, at which a location (P S ) characteristic of the polycrystal and situated at the lower end of a conical section of the polycrystal reaches or exceeds a predetermined distance (d) relative to a fixed reference point (P B ) during movement of the polycrystal, the switchover position (h′) determined from the intermediate position (h); and

f) in the fourth phase (P 4 ) reducing the rate at which the polycrystal is moved relative to the melting apparatus, when the switchover position (h′) is reached.

2. The method of claim 1 , further comprising determining an intermediate position (h) of said polycrystal in addition to the distance (d) and determining the switchover position (h′) from the intermediate position (h) by using the distance (d).

3. The method of claim 1 , further comprising capturing the location (P S ) characteristic of the polycrystal on the basis of a characteristic diameter or predefined diameter of the polycrystal.

4. The method of claim 2 , further comprising capturing the location (P S ) characteristic of the polycrystal on the basis of a characteristic diameter or predefined diameter of the polycrystal.

5. The method of claim 1 , wherein the location (P S ) characteristic of the polycrystal at the lower end of the conical section of the polycrystal comprises a location at which an angle of inclination of the conical section of the polycrystal changes by more than a predefined value.

6. The method of claim 1 , further comprising capturing the location (P S ) characteristic of the polycrystal by using a camera, which is disposed above the melting apparatus.

7. The method of claim 1 , further comprising determining the switchover position (h′) in the first phase (P 1 ) and/or in the second phase (P 2 ).

8. The method of claim 1 , wherein the rate at which the polycrystal is moved relative to the melting apparatus is 0.5 mm/min or more before the reduction of the rate, and is less than 0.5 mm/min after the reduction of the rate.

9. The method of claim 1 , further comprising moving the polycrystal in accordance with a target curve for the rate at which the polycrystal is moved relative to the melting apparatus, before and after the reduction in the rate.

Assignees

• Siltronic Ag

Inventors

• Schroeck Thomas

Classifications

• C30B13/30 Primary

  Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal · CPC title

• C30B13/28 Primary

  Controlling or regulating · CPC title

• C30B13/24

  using electromagnetic waves · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B13/32

  Mechanisms for moving either the charge or the heater · CPC title