Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer

Patent metadata

Field	Value
Publication number	US-11788201-B2
Application number	US-201917256138-A
Country	US
Kind code	B2
Filing date	Jun 4, 2019
Priority date	Jun 25, 2018
Publication date	Oct 17, 2023
Grant date	Oct 17, 2023

Abstract

Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving
melting feed rod material in a high frequency magnetic field of a first induction coil; crystallizing material of the molten zone on top of the growing single crystal; rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

First claim

The invention claimed is:

1. A method for producing a single crystal of semiconductor material doped with dopant, comprising:
creating a molten zone between a feed rod and a growing single crystal;
melting material of the feed rod in a high frequency magnetic field of a first induction coil;
crystallizing material of the molten zone on top of the growing single crystal;
rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and
imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

2. The method of claim 1 , wherein an axis through the center of the second induction coil and the axis of rotation of the growing single crystal include an angle which is not less than 15° and not more than 30°.

3. The method of claim 1 , wherein the second induction coil is operated with a magnetomotive force of not less than 700 ampere-turns and not more than 1100 ampere-turns.

4. The method of claim 1 , further comprising conducting a doping gas containing the dopant to the molten zone in a path to an outer portion of the molten zone.

5. The method of claim 4 , wherein conducting the doping gas to the molten zone on the way to the outer portion of the molten zone is started after the growing single crystal has reached a diameter corresponding to at least 95% of the diameter of a cylindrical portion of the growing single crystal and before the diameter is 100% of the diameter of the cylindrical portion.

6. A device for producing a single crystal of semiconductor material doped with dopant, comprising:
a first induction coil for creating a molten zone between a feed rod and a growing single crystal;
current leads to the first induction coil; and
a second induction coil surrounding the growing single crystal and imposing an alternating magnetic field on said molten zone, said second induction coil being tilted from a horizontal plane.

7. The device of claim 6 , wherein an axis through the center of the second induction coil includes an angle with an axis of rotation of the growing single crystal that is not less than 15° and not more than 30°.

8. The device of claim 6 , wherein the distance between the first and second induction coils is greatest where the first induction coil has its current leads.

9. The device of claim 5 , further comprising at least one nozzle for conducting doping gas containing the dopant to an outer portion of the molten zone.

10. The device of claim 9 , comprising three nozzles spaced 120° from each other for conducting the doping gas to the outer portion of the molten zone.

11. The device of claim 6 , further comprising a reheater surrounding the growing single crystal in the region of a phase boundary between the molten zone and the growing single crystal.

12. A semiconductor wafer of single crystal silicon having a diameter 2R of at least 200 mm having an edge and doped with an n-type dopant, and comprising
an interstitial oxygen concentration of not more than 1×10 16 atoms/cm 3 ;
an increase in resistivity from a position R/2 to the edge of the semiconductor wafer of at least 2%, wherein R denotes the radius of the semiconductor wafer;
a variation in resistivity expressed as RRV of not more than 9%; and
striations with a fluctuation range of not more than ±10%.

Assignees

• Siltronic Ag

Inventors

• Altmannshofer Ludwig
• Meisterernst Goetz
• Ratnieks Gundars
• Zitzelsberger Simon

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/263

  using melted materials · CPC title

• C30B13/20 Primary

  by induction, e.g. hot wire technique (C30B13/18 takes precedence) · CPC title

• C30B13/12

  in the gaseous or vapour state · CPC title