Polycrystalline silicon, FZ single crystal silicon, and method for producing the same

Patent metadata

Field	Value
Publication number	US-10066320-B2
Application number	US-201715432171-A
Country	US
Kind code	B2
Filing date	Feb 14, 2017
Priority date	Apr 4, 2016
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

When FZ single crystal silicon is produced from polycrystalline silicon, which is synthesized by the Siemens method followed by being subjected to thermal treatment and includes crystal grains having a Miller index plane <111> or <220> as a principal plane and grown by the thermal treatment, and in which the X-ray diffraction intensity from either of the Miller index planes <111> and <220> after the thermal treatment is 1.5 times or less the X-ray diffraction intensity before the thermal treatment, as raw material, disappearance of crystal lines in the step of forming an FZ single crystal is markedly prevented.

First claim

What is claimed is:

1. A polycrystalline silicon obtained by synthesis by the Siemens method followed by thermal treatment, wherein crystal grains having Miller index planes <111> and <220> as a principal plane are grown by the thermal treatment an wherein X-ray diffraction intensity from either of the Miller index planes <111> and <220> after the thermal treatment is 1.5 times or less X-ray diffraction intensity before the thermal treatment.

2. The polycrystalline silicon according to claim 1 , wherein the crystal grains have an increased grain size due to the thermal treatment.

3. The polycrystalline silicon according to claim 1 , wherein a thermal diffusivity varies between before and after the thermal treatment.

4. The polycrystalline silicon according to claim 2 , wherein an average crystal grain size after the thermal treatment is three times or more an average crystal grain size before the thermal treatment.

5. The polycrystalline silicon according to claim 3 , wherein the thermal diffusivity in a plane perpendicular to the growth direction increases after the thermal treatment.

6. A method for producing FZ single crystal silicon using the polycrystalline silicon according to claim 1 as a raw material.

7. FZ single crystal silicon obtained by the production method according to claim 6 .

Assignees

• Shinetsu Chemical Co

Inventors

• Miyao Shuichi
• Netsu Shigeyoshi

Classifications

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title

• C23C16/24

  Deposition of silicon only · CPC title

• C30B13/08

  adding crystallising materials or reactants forming it in situ to the molten zone · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title