Method for manufacturing polycrystalline silicon bar and polycrystalline silicon bar
US-2017210630-A1 · Jul 27, 2017 · US
Polycrystalline silicon rod and method for producing single crystal silicon
US2019119829A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019119829-A1 |
| Application number | US-201816161526-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 16, 2018 |
| Priority date | Oct 20, 2017 |
| Publication date | Apr 25, 2019 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 μm is not observed.
First claim
Opening claim text (preview).
What is claimed is: 1 . A polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 μm is not observed. 2 . A polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.1 MPaG or less, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 100 μm is not observed. 3 . A method for producing single crystal silicon, using the polycrystalline silicon rod according to claim 1 as a raw material. 4 . A method for producing single crystal silicon, using the polycrystalline silicon rod according to claim 2 as a raw material.
Assignees
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Classifications
Products containing multiple oriented crystallites, e.g. columnar crystallites · CPC title
- C30B29/06Primary
Silicon · CPC title
characterised by the seed, e.g. its crystallographic orientation · CPC title
Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title
Purification (by zone-melting C30B13/00) · CPC title
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- What does patent US2019119829A1 cover?
- The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline…
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification C30B29/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Apr 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).