Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-12266526-B2 · Apr 1, 2025 · US
Vaporous components, e.g. vapour-liquid-solid-growth
Vaporous components, e.g. vapour-liquid-solid-growth · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B11/12 |
| Official title | Vaporous components, e.g. vapour-liquid-solid-growth |
| Display label | Vaporous components, e.g. vapour-liquid-solid-growth |
| Total patents | 62 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 8 |
| 2017 | 9 |
| 2018 | 5 |
| 2019 | 7 |
| 2020 | 7 |
| 2021 | 3 |
| 2022 | 7 |
| 2023 | 4 |
| 2024 | 4 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Fabrication methods
US-12171148-B2 · Dec 17, 2024 · US
Transferable Networks and Arrays of Nanostructures
US-2024191396-A1 · Jun 13, 2024 · US
Superconductor-semiconductor fabrication
US-11974509-B2 · Apr 30, 2024 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-2024030027-A1 · Jan 25, 2024 · US
Silicon and silica nanostructures and method of making silicon and silica nanostructures
US-11807571-B2 · Nov 7, 2023 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-11784045-B2 · Oct 10, 2023 · US
Superconductor-semiconductor fabrication
US-2023247918-A1 · Aug 3, 2023 · US
Superconductor-semiconductor fabrication
US-11711986-B2 · Jul 25, 2023 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-2022130669-A1 · Apr 28, 2022 · US
Fabrication methods
US-11296145-B2 · Apr 5, 2022 · US
Fabrication methods
US-2022102425-A1 · Mar 31, 2022 · US
Silicon and silica nanostructures and method of making silicon and silica nanostructures
US-2022098094-A1 · Mar 31, 2022 · US
Non-contiguous channel bonding
US-2022053565-A1 · Feb 17, 2022 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-11251042-B2 · Feb 15, 2022 · US
Silicon and silica nanostructures and method of making silicon and silica nanostructures
US-11225434-B2 · Jan 18, 2022 · US
Non-contiguous channel bonding
US-11184927-B2 · Nov 23, 2021 · US
Formation of single crystal semiconductors using planar vapor liquid solid epitaxy
US-2021134594-A1 · May 6, 2021 · US
Semiconductor Josephson junction and a transmon qubit related thereto
US-10903411-B2 · Jan 26, 2021 · US
Silicon and silica nanostructures and method of making silicon and silica nanostructures
US-2020290921-A1 · Sep 17, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B11/12?
- CPC C30B11/12 is the Cooperative Patent Classification code for “Vaporous components, e.g. vapour-liquid-solid-growth.”
- How many patents are filed under CPC C30B11/12 (Vaporous components, e.g. vapour-liquid-solid-growth)?
- Our database includes 62 publications tagged with this CPC code.
- Is patent activity under CPC C30B11/12 growing?
- Publication counts under this code: 4 in 2024 vs 3 in 2025 (latest complete years).