Silicon and silica nanostructures and method of making silicon and silica nanostructures

Patent metadata

Field	Value
Publication number	US-11225434-B2
Application number	US-202016891606-A
Country	US
Kind code	B2
Filing date	Jun 3, 2020
Priority date	Jul 2, 2014
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

First claim

What is claimed is:

1. A method for preparing a composition comprising the steps of:
providing a silica-containing glass substrate;
providing one or more metal nanoparticles on the silica-containing glass substrate; and
performing reactive ion etching of the silica-containing glass substrate under conditions suitable for the formation of nanopillars on the silica-containing glass substrate and one or more silicon nanostructures extending from the nanopillars;
wherein the one or more silicon nanostructures comprise one or more nanotubes.

2. The method of claim 1 , wherein the metal nanoparticles are metal dewetted particles.

3. The method of claim 1 , wherein the metal nanoparticles have an average lateral cross-section between about 30 nm and about 200 nm.

4. The method of claim 1 , wherein the reactive ion etching is performed at a temperature less than 300° C.

5. The method of claim 1 , wherein the reactive ion etching is performed at a temperature less than 100° C.

6. The method of claim 1 , further comprising oxidizing the silicon nanostructures to form the one or more silica nanostructures.

7. The method of claim 6 , further comprising removing the silicon nanostructures from the silica-containing glass substrate prior to oxidation.

8. The method of claim 1 , further comprising removing the silicon nanostructures from the silica-containing glass.

9. The method of claim 1 , wherein the silica-containing glass substrate is fused silica glass.

10. The method of claim 1 , wherein the silicon nanostructures have lengths between about 50 mm and about 2000 nm.

11. The method of claim 1 , wherein the silicon nanostructures have a surface density on the silica-containing glass substrate of at least 10 10 cm −2 .

12. The method of claim 1 , wherein the silicon nanostructures are substantially transparent.

13. The method of claim 1 , wherein the silica-containing glass substrate comprises at least 70% silica.

14. The method of claim 1 , wherein the metal nanoparticles are selected from the group consisting of copper, nickel, gold, platinum, iron, titanium, aluminum, and combinations thereof.

15. The method of claim 1 , wherein pressure during the reactive ion etching is between about 1 mTorr to about 200 mTorr.

16. The method of claim 1 , wherein the reactive ion etching process is carried out from about one minute to about 60 minutes.

Assignees

• Corning Inc
• Icfo

Inventors

• Carrilero Albert
• Mazumder Prantik
• Pruneri Valerio

Classifications

• C30B11/12 Primary

  Vaporous components, e.g. vapour-liquid-solid-growth · CPC title

• C30B29/602

  Nanotubes · CPC title

• C30B29/60

  characterised by shape · CPC title

• C01B33/12

  Silica; Hydrates thereof, e.g. lepidoic silicic acid · CPC title

• C01P2004/13

  Nanotubes · CPC title