Apparatus and method for modulating azimuthal uniformity in electroplating

Patent metadata

Field	Value
Publication number	US-9988733-B2
Application number	US-201514734882-A
Country	US
Kind code	B2
Filing date	Jun 9, 2015
Priority date	Jun 9, 2015
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.

First claim

The invention claimed is:

1. An electroplating apparatus comprising:
(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a semiconductor substrate;
(b) a substrate holder configured to hold the semiconductor substrate during electroplating;
(c) an ionically resistive ionically permeable element comprising a substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current through the element towards the semiconductor substrate during electroplating, wherein the ionically resistive ionically permeable element comprises a plurality of non-communicating channels, and wherein the ionically resistive ionically permeable element is positioned such that a closest distance between the substrate-facing surface of the element and a working surface of the semiconductor substrate is about 10 mm or less;
(d) a first shield, configured for providing azimuthally asymmetric shielding, wherein the shield has a substrate-facing surface and an opposing surface, wherein the first shield is positioned such that the closest distance between the substrate-facing surface of the first shield and the working surface of the substrate is less than about 2 mm and such that there is an electrolyte-filled gap between the substrate-facing surface of the ionically resistive ionically permeable element and the first shield during electroplating; and
(e) a second shield positioned in contact with the opposing surface of the ionically resistive ionically permeable element, and blocking at least a portion of the non-communicating channels falling into a projection of the first shield such that ionic current flow through said portion of the non-communicating channels is blocked, wherein
the electroplating apparatus is configured such that there is a microchamber between the semiconductor substrate and the ionically resistive ionically permeable element during electroplating, said microchamber having an inlet for introducing electrolyte flowing to the microchamber, and an outlet for receiving electrolyte flowing through the microchamber, wherein the inlet and the outlet are positioned proximate azimuthally opposing perimeter locations of the working surface of the semiconductor substrate, and wherein the inlet and outlet are adapted to generate cross-flow of electrolyte in the microchamber, including in the electrolyte-filled gap between the substrate-facing surface of the ionically resistive ionically permeable element and the first shield during electroplating.

2. The electroplating apparatus of claim 1 , wherein the closest distance between the substrate-facing surface of the first shield and the working surface of the semiconductor substrate is about 0.5 mm-1.5 mm.

3. The electroplating apparatus of claim 1 , wherein the substrate-facing surface of the first shield is contoured such that a distance from the substrate-facing surface of the first shield to the working surface of the semiconductor substrate is varied.

4. The electroplating apparatus of claim 1 , wherein the substrate-facing surface of the first shield is contoured such that a distance from the substrate-facing surface of the first shield to the working surface of the semiconductor substrate is varied radially for a selected azimuthal position.

5. The electroplating apparatus of claim 1 , wherein the substrate-facing surface of the first shield is contoured such that a distance from the substrate-facing surface of the first shield to the working surface of the semiconductor substrate at a first radial position is greater than at a second radial position, wherein the second radial position is greater than the first radial position.

6. The electroplating apparatus of claim 1 , wherein the substrate-facing surface of the first shield is contoured such that a distance from the substrate-facing surface of the first shield to the working surface of the semiconductor substrate gradually decreases in a radial direction as the radial position increases at least for a portion of the first shield.

7. The electroplating apparatus of claim 1 , wherein the first shield has one or more electrolyte-permeable openings.

8. The electroplating apparatus of claim 1 , wherein the first shield is generally wedge-shaped.

9. The electroplating apparatus of claim 1 , wherein the first shield is generally wedge-shaped and has a central wedge angle of between about 100-180°, located at a radial distance of between about 10-40 mm from a radial position of an edge of the substrate.

10. The electroplating apparatus of claim 1 , wherein the ionically resistive ionically permeable element is positioned such that the distance between the substrate-facing surface of the ionically resistive ionically permeable element and the working surface of the semiconductor substrate is between about 2-10 mm during electroplating, and wherein the first shield is positioned such that the smallest distance between the substrate-facing surface of the first shield and the working surface of the semiconductor substrate is about 1.5 mm or less during electroplating.

11. The electroplating apparatus of claim 1 , wherein the gap between the ionically resistive ionically permeable element and the first shield is between about 0.5-5 mm.

Assignees

• Lam Res Corp

Inventors

• Graham Gabriel Hay
• Chua Lee Peng
• Mayer Steven T
• Rash Robert
• Berke Aaron

Classifications

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

• C25D17/008

  Current shielding devices · CPC title

• C25D21/12

  Process control or regulation (controlling or regulating in general G05) · CPC title

• C25D5/02

  Electroplating of selected surface areas · CPC title