Programmable delay circuit including hybrid fin field effect transistors (finFETs)

US9985616B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9985616-B2
Application numberUS-201715396847-A
CountryUS
Kind codeB2
Filing dateJan 3, 2017
Priority dateJul 8, 2015
Publication dateMay 29, 2018
Grant dateMay 29, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Embodiments relate to programmable delay circuit. An aspect includes a first stage comprising a first hybrid fin field effect transistor (finFET) comprising a first gate corresponding to a first control FET, and a second gate corresponding to a first default FET, and a first plurality of fins, wherein the first gate and the second gate of the first stage each partially control a first shared fin of the first plurality of fins. Another aspect includes a second stage connected in series with the first stage, the second stage comprising a second hybrid finFET comprising a first gate corresponding to a second control FET, and a second gate corresponding to a second default FET, and a second plurality of fins, wherein the first gate and the second gate of the second stage each partially control a second shared fin of the second plurality of fins.

First claim

Opening claim text (preview).

What is claimed is: 1. A programmable delay circuit, comprising: a first stage comprising a first hybrid fin field effect transistor (finFET), the first hybrid finFET comprising a first gate corresponding to a first control FET, and a second gate corresponding to a first default FET, and a first plurality of fins, wherein the first gate and the second gate of the first stage each partially control a first shared fin of the first plurality of fins; a second stage connected in series with the first stage, the second stage comprising a second hybrid finFET, the second hybrid finFET comprising a first gate corresponding to a second control FET, and a second gate corresponding to a second default FET, and a second plurality of fins, wherein the first gate and the second gate of the second stage each partially control a second shared fin of the second plurality of fins, wherein the first control FET receives a first control signal as a gate voltage, and the second control FET receives a second control signal as a gate voltage; and an input/output FET that is connected in series with the first stage and the second stage, wherein the input/output FET receives an input signal, and outputs an output signal having a specified delay based on the first control signal and the second control signal. 2. The programmable delay circuit of claim 1 , wherein the first default FET and the first control FET are in parallel in the first hybrid finFET, and wherein the second default FET and the second control FET are in parallel in the second hybrid finFET. 3. The programmable delay circuit of claim 1 , wherein the input/output FET comprises a trigate finFET comprising three fins. 4. The programmable delay circuit of claim 3 , wherein the first plurality of fins and the second plurality of fins each comprise three fins that correspond to the three fins of the trigate finFET. 5. The programmable delay circuit of claim 4 , wherein the three fins of the input/output FET are located between an output node and a first source/drain connection; wherein the three fins of the first hybrid finFET are located between the first source/drain connection and a second source/drain connection, and wherein the three fins of the second hybrid finFET is located between the second source/drain connection and a ground node. 6. The programmable delay circuit of claim 1 , wherein the first control FET exclusively controls at least two fins of the first plurality of fins, and wherein the second control FET exclusively controls at least two fins of the second plurality of fins. 7. The programmable delay circuit of claim 1 , wherein the first plurality of fins and the second plurality of fins each comprise 3-dimensional silicon fins.

Assignees

Inventors

Classifications

  • comprising FinFETs · CPC title

  • H03K5/134Primary

    with field-effect transistors · CPC title

  • where the conduction path of the different output FET's is connected in parallel with different gate control, e.g. having different sizes or thresholds, or coupled through different resistors · CPC title

  • Variable delay · CPC title

  • Electricity · mapped topic

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9985616B2 cover?
Embodiments relate to programmable delay circuit. An aspect includes a first stage comprising a first hybrid fin field effect transistor (finFET) comprising a first gate corresponding to a first control FET, and a second gate corresponding to a first default FET, and a first plurality of fins, wherein the first gate and the second gate of the first stage each partially control a first shared fi…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H03K5/134. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 29 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).