Diluted drift layer with variable stripe widths for power transistors

Patent metadata

Field	Value
Publication number	US-9985028-B2
Application number	US-201715491179-A
Country	US
Kind code	B2
Filing date	Apr 19, 2017
Priority date	Mar 27, 2015
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A multi-finger lateral high voltage transistors (MFLHVT) includes a substrate doped a first dopant type, a well doped a second dopant type, and a buried drift layer (BDL) doped first type having a diluted BDL portion (DBDL) including dilution stripes. A semiconductor surface doped the second type is on the BDL. Dielectric isolation regions have gaps defining a first active area in a first gap region (first MOAT) and a second active area in a second gap region (second MOAT). A drain includes drain fingers in the second MOAT interdigitated with source fingers in the first MOAT each doped second type. The DBDL is within a fingertip drift region associated drain fingertips and/or source fingertips between the first and second MOAT. A gate stack is on the semiconductor surface between source and drain. The dilution stripes have stripe widths that increase monotonically with a drift length at their respective positions.

First claim

The invention claimed is:

1. A multi-finger lateral transistor, comprising:
a buried drift layer (BDL) doped of a first dopant type having a diluted BDL portion (DBDL) including a plurality of dilution stripes;
a drain comprising a plurality of drain fingers having drain fingertips interdigitated with a source comprising a plurality of source fingers having source fingertips, each doped a second dopant type;
a fingertip drift region (FDR) associated with at least one of said drain fingertips and said source fingertips, said DBDL extending within the FDR;
a first gate structure between said source and said drain;
wherein said plurality of dilution stripes have respective stripe widths that increase monotonically within the FDR from the at least one of said drain fingertips or source fingertips.

2. The multi-finger lateral transistor of claim 1 , wherein said FDR is a source FDR and said respective stripe widths within the source FDR increase monotonically with an increasing angle θ relative to a boundary of the source FDR with a linear drift region having a maximum width at 90 degrees.

3. The multi-finger lateral transistor of claim 1 , wherein said FDR is a drain FDR, and wherein said respective stripe widths for said drain FDR decrease monotonically with an increasing angle θ relative to a boundary of said drain FDR with a linear drift region having a minimum width at 90 degrees.

4. The multi-finger lateral transistor of claim 1 , wherein said FDR comprises a source FDR and a drain FDR.

5. The multi-finger lateral transistor of claim 1 , wherein said first gate structure comprises a split-gate including a first gate stack and a second gate stack lateral to said first gate stack.

6. The multi-finger lateral transistor of claim 1 , wherein said multi-finger lateral transistor comprises a drain-extended MOS (DEMOS) transistor.

7. The multi-finger lateral transistor of claim 1 , wherein said multi-finger lateral transistor comprises laterally diffused MOS (LDMOS) transistor.

8. The multi-finger lateral transistor of claim 1 , wherein said substrate comprises silicon and a gate electrode of said first gate stack comprises polysilicon.

9. An integrated circuit (IC), comprising:
a substrate doped a first dopant type;
a multi-finger lateral transistor, comprising:
a buried drift layer (BDL) doped the first dopant type having a diluted BDL portion (DBDL) including a plurality of dilution stripes;
a drain comprising a plurality of drain fingers having drain fingertips interdigitated with a source comprising a plurality of source fingers having source fingertips, each doped a second dopant type;
a fingertip drift region (FDR) associated with at least one of said drain fingertips and said source fingertips, the DBDL being within the FDR;
a first gate structure between said source and said drain;
wherein said plurality of dilution stripes have respective stripe widths that increase monotonically with a drift length at their respective positions; and
a symmetric p-channel Metal Oxide Semiconductor (PMOS) transistor and symmetric n-channel MOS (NMOS) transistor formed in said substrate.

10. The IC of claim 9 , wherein said FDR is a source FDR and said respective stripe widths for said source FDR increase monotonically with an increasing angle θ relative to a boundary of said source FDR with a linear drift region having a maximum width at 90 degrees.

11. The IC of claim 9 , wherein said FDR is a drain FDR and said respective stripe widths for said drain FDR decrease monotonically with an increasing angle θ relative to a boundary of said drain FDR with a linear drift region having a minimum width at 90 degrees.

12. The IC of claim 9 , wherein said FDR comprises a source FDR and a drain FDR.

13. The IC of claim 9 , wherein said first gate structure comprises a split-gate including a first gate stack and a second gate stack lateral to said first gate stack.

Assignees

• Texas Instruments Inc

Inventors

• Zhang Yongxi
• Pendharkar Sameer P
• Balster Scott G

Classifications

• H10P30/22

  using masks · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H01L29/7816

  Electricity · mapped topic

• H01L29/063

  Electricity · mapped topic