High voltage resistor with high voltage junction termination
US-2024014260-A1 · Jan 11, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/063 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 1,047 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 68 |
| 2016 | 126 |
| 2017 | 162 |
| 2018 | 118 |
| 2019 | 129 |
| 2020 | 115 |
| 2021 | 84 |
| 2022 | 79 |
| 2023 | 61 |
| 2024 | 90 |
| 2025 | 15 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Forming jfet and ldmos transistor in monolithic power integrated circuit using deep diffusion regions
US-2015380398-A1 · Dec 31, 2015 · US
Edge termination structure with trench isolation regions
US-9224806-B2 · Dec 29, 2015 · US
Method of forming high voltage device
US-9224732-B2 · Dec 29, 2015 · US
Power device termination structures and methods
US-2015372130-A1 · Dec 24, 2015 · US
Edge termination structure for a power integrated device and corresponding manufacturing process
US-2015372075-A1 · Dec 24, 2015 · US
Insulated gate bipolar transistor structure having low substrate leakage
US-9214547-B2 · Dec 15, 2015 · US
Method of integrating high voltage devices
US-9214457-B2 · Dec 15, 2015 · US
Integrated channel diode
US-2015357459-A1 · Dec 10, 2015 · US
Integrated termination for multiple trench field plate
US-2015357461-A1 · Dec 10, 2015 · US
Semiconductor device
US-2015357404-A1 · Dec 10, 2015 · US
Metal oxide semiconductor field effect transistor with reduced surface field folding
US-9196680-B1 · Nov 24, 2015 · US
Metal oxide semiconductor field effect transistor with reduced surface field folding
US-9196681-B1 · Nov 24, 2015 · US
Semiconductive device and associated method of manufacture
US-2015333133-A1 · Nov 19, 2015 · US
Vertical trench mosfet device in integrated power technologies
US-2015325638-A1 · Nov 12, 2015 · US
Semiconductor device and method for producing same
US-2015311278-A1 · Oct 29, 2015 · US
Semiconductor device with HCI protection region
US-9159803-B2 · Oct 13, 2015 · US
Method for protecting a semiconductor device against degradation and a method for manufacturing a semiconductor device protected against hot charge carriers
US-9159796-B2 · Oct 13, 2015 · US
Method for creating the high voltage complementary bjt with lateral collector on bulk substrate with resurf effect
US-2015287716-A1 · Oct 8, 2015 · US
Power superjunction mosfet device with resurf regions
US-2015287778-A1 · Oct 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/063?
- CPC H01L29/063 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/063 (Electricity)?
- Our database includes 1,047 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/063 growing?
- Publication counts under this code: 90 in 2024 vs 15 in 2025 (latest complete years).