Method and apparatus for reducing radiation induced change in semiconductor structures

Patent metadata

Field	Value
Publication number	US-9978620-B2
Application number	US-201715584767-A
Country	US
Kind code	B2
Filing date	May 2, 2017
Priority date	Mar 19, 2015
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g., <20° C.) during the one or more parts of the IC formation processing sequence.

First claim

The invention claimed is:

1. A substrate inspection apparatus, comprising:
a substrate support disposed within a processing region of the substrate inspection apparatus, wherein the substrate support comprises a substrate chuck that has a substrate supporting surface;
a radiation source that is configured to inspect a substrate by delivering radiation to a surface of a substrate disposed on the substrate supporting surface during an inspection process;
a support assembly that comprises one or more actuators that are configured to translate the substrate support relative to the radiation source;
a temperature control assembly that is in thermal communication with the substrate supporting surface, wherein the temperature control assembly is configured to cool the substrate supporting surface to a first temperature that is less than 20° C. during the inspection process; and
a radiation detector configured to detect radiation reflected or scattered from a surface of a substrate that is disposed on the substrate supporting surface.

2. The substrate inspection apparatus of claim 1 , wherein the radiation source is configured to generate electromagnetic radiation or an electron beam.

3. The substrate inspection apparatus of claim 2 , wherein the radiation source is configured to generate electromagnetic radiation at a wavelength of between about 193 nm and 355 nm.

4. The substrate inspection apparatus of claim 1 , further comprising:
an enclosure that comprises one or more walls that define the processing region; and
a thermal control device that has a substrate supporting surface that is disposed in the processing region, and is configured to maintain the substrate supporting surface of the thermal control device at a temperature greater than the first temperature.

5. The substrate inspection apparatus of claim 1 , further comprising:
an enclosure that comprises one or more walls that define the processing region, wherein the enclosure is sealable during the inspection process to prevent atmospheric contamination from entering the process region during the inspection process; and
a thermal control device that has a substrate supporting surface that is disposed in the processing region, and is configured to maintain the substrate supporting surface of the thermal control device at a temperature greater than a dew point of an atmospheric environment positioned in a region external to the processing region.

6. The substrate inspection apparatus of claim 5 , further comprising a gas source that is configured to deliver a dry gas to the processing region, wherein the dry gas comprises nitrogen (N 2 ), argon (Ar), helium (He), neon (Ne), krypton (Kr) or xenon (Xe).

7. The substrate inspection apparatus of claim 1 , wherein the substrate chuck further comprises an electrostatic chuck that comprises a bias electrode and a chucking power source.

8. The substrate inspection apparatus of claim 7 , wherein the substrate chuck further comprises one or more grooves that are formed in the substrate supporting surface and are configured to receive a gas from a gas source.

9. The substrate inspection apparatus of claim 1 , further comprising:
an objective lens that is disposed between the radiation source and the substrate support.

10. The substrate inspection apparatus of claim 9 , wherein the objective lens is disposed between the radiation detector and the substrate support.

11. A substrate inspection apparatus, comprising:
a sealed enclosure that comprises a port that is selectively sealable to prevent contamination from entering a processing region formed therein during an inspection process;
a substrate support disposed in the processing region comprising a base having one or more channels;
a radiation source that is configured to inspect a substrate by delivering radiation to a substrate disposed on the substrate supporting surface during the inspection process;
a chiller coupled to the one or more channels; and
a radiation detector configured to detect radiation reflected or scattered from a surface of a substrate that is disposed on the substrate supporting surface.

12. The substrate inspection apparatus of claim 11 , wherein the chiller is configured to circulate a cooling fluid through the one or more channels during the inspection process.

13. The substrate inspection apparatus of claim 11 , further comprising a support assembly that comprises one or more actuators that are configured to translate the substrate support relative to the radiation source.

14. The substrate inspection apparatus of claim 11 , further comprising:
an objective lens that is disposed between the radiation source and the substrate support.

15. The substrate inspection apparatus of claim 14 , wherein the objective lens is disposed between the radiation detector and the substrate support.

16. A substrate inspection apparatus, comprising:
an enclosure that comprises one or more walls that define a processing region;
a substrate support disposed in the processing region;
a radiation source that is configured to inspect a substrate by delivering radiation to a substrate disposed on the substrate supporting surface during an inspection process, the substrate having a first surface including a patterned structure;
a temperature regulation source configured to cool a localized area of the first surface without cooling other portions of the first surface; and
a radiation detector configured to detect radiation reflected or scattered from a surface of a substrate that is disposed on the substrate supporting surface.

17. The substrate inspection apparatus of claim 16 , wherein the temperature regulation source is configured to cool the localized area of the first surface prior to exposure of the localized area to radiation during the inspection process.

18. The substrate inspection apparatus of claim 16 , further comprising a chiller, wherein the substrate support comprises a base including one or more channels coupled to the chiller.

19. The substrate inspection apparatus of claim 18 , wherein the temperature regulation source is configured to cool the substrate from above the substrate support.

20. The substrate inspection apparatus of claim 16 , further comprising:
an objective lens that is disposed between the radiation source and the substrate support.

Assignees

• Applied Materials Inc

Inventors

• Dickerson Gary E
• LIM Seng (victor) Keong
• Banna Samer
• Kirk Gregory
• Vaez-Iravani Mehdi

Classifications

• H10P72/0432

  mainly by conduction · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title