Binary metal oxide based interlayer for high mobility channels

Patent metadata

Field	Value
Publication number	US-9972695-B2
Application number	US-201615228160-A
Country	US
Kind code	B2
Filing date	Aug 4, 2016
Priority date	Aug 4, 2016
Publication date	May 15, 2018
Grant date	May 15, 2018

Abstract

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

First claim

What is claimed is:

1. A method of forming a gate stack comprising:
treating a semiconductor fin structure with a wet etch chemistry to clean a surface of the semiconductor fin structure and form an oxide containing interfacial layer on the surface of the semiconductor fin structure;
converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a plasma selected from the group consisting of hydrogen, nitrogen or a combination thereof; and
forming a high-k dielectric layer atop the binary alloy oxide-based interlayer.

2. The method of claim 1 , wherein the semiconductor fin structure comprises a III-V semiconductor substrate.

3. The method of claim 1 , wherein the wet etch chemistry is selected from the group consisting of ammonium fluoride (NH 4 F), hydrofluoric acid (HF), hydrochloric acid (HCl), ammonium hydroxide (NH 4 OH), ammonium sulfide (NH 4 )2S and combinations thereof.

4. The method of claim 1 , wherein the treating of the semiconductor substrate with the wet etchant chemistry comprises a two stage treatment including a first surface treatment with ammonium hydroxide (NH 4 OH) followed by a second surface treatment with ammonium sulfide (NH 4 ) 2 S.

5. The method of claim 1 , wherein the converting the oxide containing interfacial layer to a binary oxide based alloy using a plasma deposition sequence including alternating a metal gas precursor and the plasma employs an atomic layer deposition (ALD) apparatus.

6. The method of claim 5 , wherein the binary alloy oxide based interlayer comprises aluminum, titanium, oxygen and nitrogen.

7. The method of claim 6 , wherein the binary alloy oxide based interlayer comprises aluminum, titanium and oxygen.

8. The method of claim 7 , wherein the binary alloy oxide based interlayer is titanium aluminum oxynitride (TiAlON).

9. The method of claim 5 , wherein the metal gas precursor comprises an aluminum precursor selected from the group consisting of trimethyl aluminum (TMA), triethylaluminium (TEAL) or a combination thereof.

10. The method of claim 5 , wherein the metal gas precursor comprises a titanium precursor selected from the group consisting of tetrakis(dimethylamino)titanium (TDMAT), titanium tetrachloride (TiCl 4 ) and combinations thereof.

11. The method of claim 5 , wherein the metal gas precursor comprises a cycle of aluminum containing precursors and titanium containing precursors.

12. The method of claim 5 , wherein the nitrogen species of the plasma is selected from the group consisting of NH 3 plasma, N 2 plasma and a combination thereof.

13. The method of claim 5 , wherein the hydrogen species of the plasma is selected from the group consisting of CH 4 , H 2 , CH 3 Cl and a combination thereof.

14. The method of claim 12 , wherein the nitrogen containing plasma is generated remotely from a deposition chamber of an atomic layer deposition apparatus in which the oxide containing interfacial layer is converted to the oxide based binary alloy.

15. The method of claim 1 , wherein the converting the oxide containing interfacial layer to the oxide based binary alloy using the plasma deposition sequence including alternating the metal gas precursor and the nitrogen containing plasma is conducted at a temperature of 400° C. or less.

Assignees

• IBM
• Ulvac Inc

Inventors

• Narayanan Vijay
• Ogawa Yohei
• Rozen John

Classifications

• H10P70/10

  Cleaning before device manufacture, i.e. Begin-Of-Line process · CPC title

• H10P50/646

  of Group III-V materials · CPC title

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title