Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9960328-B2
Application number	US-201615256970-A
Country	US
Kind code	B2
Filing date	Sep 6, 2016
Priority date	Sep 6, 2016
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that that comprises a transparent, translucent, non-opaque, or otherwise optically-transmissive, external surface.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor package, the method comprising:
forming a first redistribution structure on an optically-transmissive carrier structure, the first redistribution structure comprising a conductive layer and a dielectric layer on the conductive layer;
attaching a semiconductor die comprising an optical device to the first redistribution structure such that a bottom surface of the semiconductor die faces the first redistribution structure and the semiconductor die is electrically coupled through the dielectric layer to the conductive layer; and
filling a region, between the bottom surface of the semiconductor die and the first redistribution structure, with an optically-transmissive underfill material.

2. The method of claim 1 , further comprising:
forming a second redistribution structure over a top surface of the semiconductor die; and
attaching a conductive interconnection structure to a conductive layer of the second redistribution structure to form an external connector of the semiconductor package.

3. The method of claim 1 , wherein the optically-transmissive carrier comprises a lens configured to direct light to or from the optical device.

4. The method of claim 1 , further comprising attaching another semiconductor die comprising another optical device to the first redistribution structure such that a bottom surface of the another semiconductor die faces the first redistribution structure.

5. The method of claim 1 , further comprising:
forming a plurality of pads connected through the dielectric layer to the conductive layer of the first redistribution structure;
wherein the attaching comprises electrically coupling the semiconductor die to the conductive layer of the first redistribution structure by soldering a plurality of pillars of the semiconductor die to the plurality of pads.

6. The method of claim 5 , wherein said forming the plurality of pads comprises forming the plurality of pads outside a window associated with the optical device of the semiconductor die.

7. The method of claim 1 , further comprising:
forming a plurality of pads electrically connected through the dielectric layer to the conductive layer of the first redistribution structure, the plurality of pads extending beyond an upper surface of the dielectric layer;
wherein the attaching comprises electrically coupling the semiconductor die to the conductive layer of the first redistribution structure by soldering a plurality of pillars of the semiconductor die to the plurality of pads.

8. A semiconductor package, comprising:
an optically-transmissive carrier structure;
a first redistribution structure on the optically-transmissive carrier structure, the first redistribution structure comprising a plurality of conductive pads; and
a semiconductor die comprising an optical device and a plurality of pillars extending from a bottom surface of the semiconductor die, the plurality of pillars attached and electrically coupled to the plurality of conductive pads such that the bottom surface of the semiconductor die faces the first redistribution structure and the optically-transmissive carrier structure wherein: the first redistribution structure comprises a conductive layer and a dielectric layer on the conductive layer; and the plurality of conductive pads are electrically coupled through the dielectric layer to the conductive layer.

9. The semiconductor package of claim 8 , further comprising an optically-transmissive underfill material between the bottom surface of the semiconductor die and the first redistribution structure.

10. The semiconductor package of claim 8 , further comprising:
a second redistribution structure over a top surface of the semiconductor die; and
a plurality of conductive interconnection structures coupled to a conductive layer of the second redistribution structure to form a plurality of external connectors of the semiconductor package.

11. The semiconductor package of claim 10 , further comprising one or more conductive vias that electrically couple the second redistribution structure to the first redistribution structure.

12. The semiconductor package of claim 8 , further comprising another semiconductor die attached and electrically coupled to the first redistribution structure such that another optical device of the another semiconductor die faces the first redistribution structure and the optically-transmissive carrier structure.

13. The semiconductor package of claim 8 , wherein the optically-transmissive carrier comprises a lens configured to direct light to or from the optical device.

14. The semiconductor package of claim 8 , wherein the optically-transmissive carrier provides light antireflective properties.

15. The semiconductor package of claim 8 , wherein the optically-transmissive carrier provides light filtering properties.

16. The semiconductor package of claim 8 , wherein the optically-transmissive carrier provides light polarization properties.

17. The semiconductor package of claim 8 , wherein the plurality of the conductive pads extend beyond the dielectric layer.

18. A semiconductor package, comprising:
an optically-transmissive carrier structure;
a redistribution structure on the optically-transmissive carrier structure;
a plurality of conductive pads electrically coupled to the redistribution structure, the plurality of conductive pads extending beyond an upper surface of the redistribution structure; and
a semiconductor die comprising an optical device electrically coupled to the plurality of conductive pads such that the bottom surface of the semiconductor die faces the redistribution structure and the optically-transmissive carrier structure wherein: the redistribution structure comprises a conductive layer, a dielectric layer on the conductive layer, and a plurality of openings that pass through the dielectric layer; and the plurality of conductive pads are electrically coupled to the conductive layer via the plurality of openings.

Assignees

• Amkor Technology Inc

Inventors

• Clark David
• Zwenger Curtis

Classifications

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title

• H10W72/30

  Die-attach connectors · CPC title