Substrate processing method

Patent metadata

Field	Value
Publication number	US-9956594-B2
Application number	US-201514978693-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Dec 26, 2014
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

First claim

What is claimed is:

1. A substrate processing method comprising:
a substrate holding step of holding a substrate horizontally;
a liquid droplet discharging step wherein liquid droplets of an organic solvent, the liquid droplets being formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate; and
a liquid film forming step, executed before the liquid droplet discharging step, of preventing droplets of the organic solvent from directly colliding with the upper surface of the dry substrate, by supplying the organic solvent to the double-fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

2. The substrate processing method according to claim 1 , further comprising: a first rotating step of rotating the substrate around the rotational axis during the liquid droplet discharging step.

3. The substrate processing method according to claim 2 , further comprising: a post-supplying step of supplying the organic solvent to the upper surface of the substrate after the liquid droplet discharging step.

4. The substrate processing method according to claim 3 , further comprising: a second rotating step, executed during the post-supplying step, of rotating the substrate around the rotational axis at a higher speed than that in the first rotating step.

5. The substrate processing method according to claim 3 , wherein in the post-supplying step, the organic solvent is supplied to the double-fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle.

6. The substrate treatment method according to claim 1 , further comprising a nozzle moving step of moving the double fluid nozzle;
wherein the liquid droplet discharging step starts discharging of droplets of the organic solvent to a discharge region of the organic solvent on the upper surface of the substrate at the end of the liquid film forming step.

7. The treatment method according to claim 6 ,
wherein the discharge region includes a peripheral edge on the upper surface of the substrate; and
the liquid droplet discharging step starts discharging of droplets of the organic solvent to the peripheral edge on the upper surface of the substrate.

8. The substrate processing method according to claim 1 , wherein the liquid droplet discharging step is a step that is executed in a state where a first guard is made to face a peripheral end surface of the substrate, and
the substrate processing method further comprises:
a drying step of rotating the substrate around a rotational axis, without supplying the organic solvent to the upper surface of the substrate, to dry the upper surface of the substrate; and
a facing guard changing step of changing the guard facing the peripheral end surface of the substrate from the first guard to a second guard, differing from the first guard, after the liquid droplet discharging step is ended and before the drying step is executed.

9. The substrate processing method according to claim 1 , further comprising: a discharge region moving step of moving the position of the discharge region within the upper surface of the substrate; and an additional organic solvent supplying step of supplying, in parallel to the discharge region moving step, the organic solvent to a rearward position with respect to a direction of progress of the discharge region; and
wherein the organic solvent is not supplied to a forward position with respect to the direction of progress of the discharge region in the additional organic solvent supplying step.

10. The substrate processing method according to claim 1 , further comprising: a preliminary preparation step of preparing a silicon substrate, having SiO 2 disposed at the upper surface, as the substrate.

11. The substrate processing method according to claim 1 , further comprising: a preliminary preparation step of preparing a semiconductor substrate, including an insulating film constituted of a low dielectric constant material of lower relative dielectric constant than SiO 2 and a copper wiring disposed on the insulating film, as the substrate.

Assignees

• Screen Holdings Co Ltd

Inventors

• Miura Atsuyasu
• Sawazaki Naoki

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/237

  the processing being a planarisation of insulating layers · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P70/50

  characterised by the part to be cleaned · CPC title