Method for producing SiC single crystal and method for suppressing dislocations in SiC single crystal
US-12247318-B2 · Mar 11, 2025 · US
This page is not indexed by search engines while we improve data quality.
Hamaguchi Yu patents
Hamaguchi Yu is listed as an inventor on 12 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Hamaguchi Yu |
| Total patents | 12 |
| First publication | Jun 11, 2015 |
| Latest publication | Mar 11, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Method for producing sic single crystal and method for suppressing dislocations in sic single crystal
US-2023083924-A1 · Mar 16, 2023 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
US-2023042620-A1 · Feb 9, 2023 · US
SiC crucible, SiC sintered body, and method of producing SiC single crystal
US-11440849-B2 · Sep 13, 2022 · US
Method for preparing SiC single crystal
US-10612154-B2 · Apr 7, 2020 · US
METHOD FOR PREPARING SiC SINGLE CRYSTAL
US-2018298519-A1 · Oct 18, 2018 · US
SiC CRUCIBLE, SiC SINTERED BODY, AND METHOD OF PRODUCING SiC SINGLE CRYSTAL
US-2018257993-A1 · Sep 13, 2018 · US
METHOD OF PRODUCING SiC SINGLE CRYSTAL
US-2018230623-A1 · Aug 16, 2018 · US
Method for growing silicon carbide crystal
US-9951439-B2 · Apr 24, 2018 · US
Method for growing silicon carbide crystal
US-9945047-B2 · Apr 17, 2018 · US
Recent patents
Latest publications not already listed above.
Method for growing silicon carbide crystal
US-2015159299-A1 · Jun 11, 2015 · US
Method for growing silicon carbide crystal
US-2015159297-A1 · Jun 11, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Shinetsu Chemical Co | 12 |
Top CPC classifications
Most common classification codes across this inventor's patents.