Manufacturing apparatus and method for semiconductor device
US-9150981-B2 · Oct 6, 2015 · US
US9948214B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9948214-B2 |
| Application number | US-201313793512-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 11, 2013 |
| Priority date | Apr 26, 2012 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
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Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.
Opening claim text (preview).
The invention claimed is: 1. A dielectric chuck body for an electrostatic chuck, comprising: a substrate supporting plate having a top surface for receiving a substrate, a back surface opposing the top surface; an electrode embedded in the substrate supporting plate; and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end, wherein the second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate and wherein the shaft is configured to be laterally spaced-apart from the cooling base, the shaft being hollow and having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end, and wherein the shaft is configured to support the substrate supporting plate above the cooling base in a spaced-apart relation. 2. The dielectric chuck body of claim 1 , further comprising one or more heating elements embedded in the substrate supporting plate and configured to heat the substrate disposed on the top surface. 3. The dielectric chuck body of claim 2 , wherein the one or more heating elements form two or more independent heating zones. 4. The dielectric chuck body of claim 2 , further comprising connectors disposed in the central opening of the shaft, wherein the connectors are coupled to the one or more heating elements and the electrode and are adapted to connect the one or more heating elements and the electrode to external power sources. 5. The dielectric body of claim 1 , wherein the substrate support plate and the shaft are bonded together to form leak-tight channels therebetween. 6. The dielectric chuck body of claim 5 , wherein the substrate supporting plate and the shaft are fabricated from ceramic. 7. The dielectric chuck body of claim 1 , wherein the substrate supporting plate has a cooling channel configured to provide a cooling fluid to the substrate. 8. The dielectric chuck body of claim 7 , further comprising a temperature sensor disposed in the substrate supporting plate, wherein the temperature sensor is configured to measure temperature of the substrate disposed on the substrate supporting plate, and a sensor lead passes through one of the two or more channels formed through the sidewall of the shaft. 9. The dielectric chuck body of claim 1 , wherein the shaft has a flange formed on the second end for effective heat exchange with the cooling base. 10. An electrostatic chuck assembly, comprising: a dielectric chuck body of claim 1 ; and a cooling base configured to provide temperature control to the dielectric chuck body, wherein the cooling base and the dielectric chuck body are coupled together at the second end of the shaft of the dielectric chuck body, and a gap is formed between the back surface of the substrate supporting plate and a top surface of the cooling base. 11. The electrostatic chuck assembly of claim 10 , wherein the cooling base comprises a body having a recess formed therein, and a bottom surface of the recess contacts the shaft of the dielectric chuck body. 12. The electrostatic chuck assembly of claim 11 , further comprising: a contact element; and a springing element, wherein the contact element and the springing element span the gap between the cooling base and the substrate supporting plate, and provides a conductive path between the cooling base and the back surface of the substrate supporting plate. 13. The electrostatic chuck assembly of claim 12 , the substrate support plate and the shaft are bonded together to form leak-tight channels therebetween. 14. The electrostatic chuck assembly of claim 12 , wherein the substrate supporting plate has a cooling channel configured to provide a cooling fluid to the substrate. 15. The electrostatic chuck assembly of claim 10 , wherein the substrate supporting plate and the shaft are fabricated from ceramic. 16. The electrostatic chuck assembly of claim 15 , wherein the edge ring assembly comprises: a lower ring disposed over the cooling base; and an upper ring supported by the substrate supporting plate, wherein the upper ring is suspended over the lower ring, a lower surface of the upper ring faces an upper surface of the lower ring, interleaving features are formed in the lower surface of the upper ring and the upper surface of the lower ring, and the interleaving features form a labyrinth between the lower ring and the upper ring. 17. The electrostatic chuck assembly of claim 10 , further comprising a conductive structure disposed between the cooling base and the shaft of the dielectric chuck body. 18. An apparatus for processing a substrate, comprising: a chamber housing assembly defining an inner volume; an electrostatic chuck assembly of claim 10 disposed in the inner volume and configured to secure and support a substrate in the inner volume during processing; and a gas injection assembly configured to deliver one or more processing gas over the substrate disposed on the electrostatic chuck assembly. 19. The apparatus of claim 18 , further comprising a liner disposed inside the chamber housing assembly surrounding a portion of the inner volume above the electrostatic chuck assembly to create a processing volume above the substrate. 20. The apparatus of claim 18 , further comprising a shadow ring disposed over an edge region of the substrate supporting plate to protect the edge region of the substrate supporting plate. 21. The apparatus of claim 1 , wherein the shaft extends through the cooling base.
characterised by the construction of the shaft · CPC title
Temperature monitoring · CPC title
mainly by convection · CPC title
mainly by conduction · CPC title
using electrostatic chucks · CPC title
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