Manufacturing method and fluid supply system for treating substrate

Patent metadata

Field	Value
Publication number	US-9941110-B2
Application number	US-201615350983-A
Country	US
Kind code	B2
Filing date	Nov 14, 2016
Priority date	Feb 8, 2012
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
supplying a supercritical fluid to dry a rinse solution provided on a semiconductor substrate;
retrieving a mixed fluid comprising a mixture of the supercritical fluid and the rinse solution and separating the supercritical fluid from the retrieved mixed fluid; and
resupplying the supercritical fluid separated from the mixed fluid to the semiconductor substrate,
wherein the semiconductor substrate forms the semiconductor device, and
wherein when supplying the supercritical fluid to dry a rinse solution, the mixed fluid is maintained at a first pressure and wherein separating the supercritical fluid comprises:
a first separation step comprising decompressing the mixed fluid to a second pressure lower than the first pressure to phase-change the supercritical fluid included in the mixed fluid to a phase different from a phase of the rinse solution and then, performing a first separation of the decompressed mixed fluid to separate the phase-changed supercritical fluid from at least some of the rinse solution; and
a second separation step comprising passing the separated supercritical fluid through an absorbent to perform a second separation of the supercritical fluid from the rinse solution,
wherein the absorbent is sequentially provided to a first absorption container and a second absorption container connected to each other in parallel, and
wherein the second separation step selectively supplies the firstly separated supercritical fluid to one of the first and second absorption containers, measures impurities of the supercritical fluid being discharged out of the absorption container to which the supercritical fluid is supplied and if impurities are detected from the supercritical fluid in the one absorption container of the first and second absorption containers, supplies the supercritical fluid to the other absorption container of the first and second absorption containers.

2. The method of claim 1 , wherein resupplying the supercritical fluid comprises:
liquefying the supercritical fluid separated in the second separation step;
storing the liquefied supercritical fluid in a storage tank as much as a previously set up flow; and
pressurizing the supercritical fluid stored in the storage tank to the first pressure.

3. The method of claim 1 , wherein the supercritical fluid is carbon dioxide having a supercritical state and wherein the absorbent includes zeolite.

4. The method of claim 1 , wherein the semiconductor substrate is included in a semiconductor wafer, further comprising, processing the semiconductor wafer to create an integrated circuit with the semiconductor wafer, wherein the processing comprises:
forming a layer on the semiconductor wafer;
patterning the layer on the semiconductor wafer;
cleaning the patterned layer on the semiconductor wafer; and
rinsing the patterned layer on the semiconductor wafer by providing a rinsing solution to the semiconductor wafer,
wherein the processed semiconductor wafer forms the semiconductor device.

5. The method of claim 4 , wherein supplying the supercritical fluid comprises drying the rinsed patterned layer by providing supercritical carbon dioxide to the semiconductor wafer within a processing chamber.

6. The method of claim 5 , wherein retrieving the mixed fluid comprises creating a mixed fluid of supercritical carbon dioxide and rinse solution within the processing chamber.

7. The method of claim 5 , wherein separating the supercritical fluid comprises reducing the first pressure of the mixed fluid to the second pressure at which a supercritical carbon dioxide portion of the mixed fluid has a gas state and at which the rinse solution has a liquid state to thereby separate liquid rinse solution from the mixed fluid and obtain a carbon dioxide remaining gas.

8. The method of claim 5 , wherein resupplying the supercritical fluid comprises:
filtering the carbon dioxide remaining gas to remove impurities; and
converting the filtered carbon dioxide remaining gas to supercritical carbon dioxide to thereby allow reuse of the carbon dioxide as a drying agent.

9. The method of claim 8 , further comprising:
after filtering the carbon dioxide remaining gas, converting the filtered carbon dioxide remaining gas to liquid carbon dioxide and storing the liquid carbon dioxide in a storage tank.

10. The method of claim 9 , further comprising:
monitoring a level of liquid carbon dioxide in the storage tank;
detecting a low level of liquid carbon dioxide in the storage tank; and
adding auxiliary liquid carbon dioxide from secondary source to the storage tank.

11. The method of claim 8 , wherein filtering the carbon dioxide comprises:
passing the carbon dioxide remaining gas through a first absorption filter;
monitoring an output of carbon dioxide remaining gas output from the first absorption filter for impurities; and
switching a flow path of the carbon dioxide remaining gas to pass through a second absorption filter and to stop passing through the first absorption filter when the monitoring indicates a level of impurities exceed a first value.

12. The method of claim 4 , wherein the cleaning and rinsing are performed within the same processing chamber.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Oh Jung-Min
• Lee Hyosan
• Ko Yongsun
• Kim Kyoungseob
• Kim Seokhoon
• Lee Kuntack
• Jun Yongmyung
• Cho Yong-Jhin

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0408

  for drying · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title