Scanning electron microscope system capable of measuring in-cell overlay offset using high-energy electron beam and method thereof

Patent metadata

Field	Value
Publication number	US-9934939-B2
Application number	US-201414464325-A
Country	US
Kind code	B2
Filing date	Aug 20, 2014
Priority date	Oct 29, 2013
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

First claim

What is claimed is:

1. A method of measuring an overlay offset using a scanning electron microscope (SEM) system, the method comprising:
scanning once an in-cell region, which includes a lower structure and an upper structure stacked in a sample, by directly radiating a primary electron beam with a landing energy of at least 10 kV to the in-cell region, the in-cell region being a region in which actual circuit patterns are implemented, the upper structure stacked above the lower structure;
detecting electrons emitted from both the lower structure and the upper structure of the scanned in-cell region as a result of interaction, caused by the scanning once the in-cell region, between electrons included in the primary electron beam and the in-cell region; and
measuring an overlay offset with respect to overlapping circuit patterns between a first actual circuit pattern included in the upper structure and a second actual circuit pattern included in the lower structure using images of the lower structure and the upper structure of the in-cell region that are simultaneously generated based on both the detected electrons emitted from the lower structure and detected electrons emitted from the upper structure of the scanned in-cell region, wherein,
the sample is at an after clean inspection (ACI) step,
the lower structure is formed at a first step in a multi-step process,
the upper structure is formed at a second step in the multi-step process, the second step subsequent to the first step, and
the second step is not performed right after the first step.

2. The method of claim 1 , wherein the detected electrons are back-scattered electrons.

3. The method of claim 1 , wherein the detected electrons are back-scattered electrons and secondary electrons.

4. The method of claim 3 , wherein measuring the overlay offset comprises measuring the overlay offset using the images that are generated based on the back-scattered electrons in a greater degree than the secondary electrons.

5. The method of claim 1 , wherein the in-cell region is separated from scribe lines of the sample and does not include alignment marks.

6. The method of claim 1 , wherein the measuring step is carried out using an image processing and overlay offset measurement device.

7. The method of claim 1 , further comprising displaying the measured overlay offset using a display.

8. A non-transitory computer readable medium storing a computer program configured to execute the method of claim 1 .

9. A method of measuring an overlay offset using a scanning electron microscope (SEM) system, the method comprising:
scanning once an in-cell region of a sample by directly radiating a primary electron beam with a landing energy of at least 10 kV, wherein the in-cell region is a region in which actual circuit pattern are implemented and comprises a lower structure and an upper structure stacked in the sample, the upper structure stacked above the lower structure;
detecting back-scattered electrons emitted from both the lower structure and the upper structure of the scanned in-cell region as a result of interaction, caused by the scanning once the in-cell region, between electrons included in the primary electron beam and the in-cell region;
simultaneously generating images of the lower structure and the upper structure of the in-cell region that are based on the detected back-scattered electrons; and
measuring an overlay offset with respect to overlapping circuit patterns between a first actual circuit pattern included in the upper structure and a second actual circuit pattern included in the lower structure using the generated images,
wherein the sample is at an after clean inspection (ACI) step,
wherein the lower structure is formed at a first step in a multi-step process,
wherein the upper structure is formed at a second step in the multi-step process, the second step subsequent to the first step,
wherein the second step is not performed right after the first step.

10. The method of claim 9 , further comprising detecting secondary electrons emitted from the scanned in-cell region, wherein generating the images of the in-cell region comprises generating the images of the in-cell region that are based on the detected back-scattered electrons and the detected secondary electrons.

11. The method of claim 10 , wherein the images are based on the back-scattered electrons to a greater degree than the secondary electrons.

12. The method of claim 9 , further comprising displaying at least one of the generated images and the measured overlay offset.

13. The method of claim 9 , wherein the detecting step is carried out using at least one detector that is positioned so as to not affect a path of the primary electron beam to the sample.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Min Kook
• Ko Woo Seok
• Yang Yu Sin
• Lee Sang Kil
• Jun Chung Sam

Classifications

• H01J37/222

  Image processing arrangements associated with the tube · CPC title

• G01N23/22

  by measuring secondary emission from the material · CPC title

• G01N23/2251

  using incident electron beams, e.g. scanning electron microscopy [SEM] · CPC title

• H01J2237/2806

  Secondary charged particle · CPC title

• G01N23/203

  Measuring back scattering · CPC title