Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9933702-B2
Application number	US-201615251072-A
Country	US
Kind code	B2
Filing date	Aug 30, 2016
Priority date	Sep 1, 2015
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A processing fluid can be discharged according to a discharge type for a process involved, without a discharge defect. A substrate processing apparatus includes a nozzle and a pipeline. The nozzle is configured to discharge the processing fluid toward a substrate, and the processing fluid is supplied to the nozzle through the pipeline. The pipeline has a three-layer structure having a first layer, a second layer and a third layer in this sequence from an inner side thereof. Further, a leading end portion of the first layer and a leading end portion of the third layer are bonded to the nozzle, and the leading end portion of the first layer is located at a position which is not protruded more than a leading end portion of the second layer with respect to a discharging direction of the processing fluid.

First claim

We claim:

1. A substrate processing apparatus, comprising:
a nozzle configured to discharge a processing fluid toward a substrate; and
a pipeline through which the processing fluid is supplied to the nozzle,
wherein the pipeline has a three-pipe structure having a first pipe, a second pipe and a third pipe in this sequence from an inner side of the pipeline,
a leading end portion of the first pipe and a leading end portion of the third pipe are bonded to a surface of the nozzle, and a leading end portion of the second pipe is inserted into the nozzle and fixed to the nozzle,
the leading end portion of the first pipe is located at a position which does not protrude more than the leading end portion of the second pipe with respect to a discharging direction of the processing fluid, and
a space is formed between the first pipe and the second pipe.

2. The substrate processing apparatus of claim 1 , further comprising:
a nozzle arm configured to support the nozzle at a leading end portion of the nozzle arm; and
an arm supporting unit configured to support a base end portion of the nozzle arm at an upper end portion of the nozzle arm,
wherein the arm supporting unit comprises a supporting member,
the first pipe extends from the base end portion of the nozzle arm, is disposed to penetrate the supporting member, and is movable along an extending direction of the first pipe, and
the second pipe is fixed to the supporting member.

3. The substrate processing apparatus of claim 2 ,
wherein the arm supporting unit further comprises a first holding seal member configured to seal around the first pipe which extends from the base end portion of the nozzle arm, and configured to hold the first pipe such that the first pipe is movable along the extending direction of the first pipe.

4. The substrate processing apparatus of claim 3 , further comprising:
a mixing region in which multiple fluids are uniformly mixed,
wherein the arm supporting unit has a shape of a hollow supporting column extended along a vertical axis, and
the mixing region is provided within the supporting column.

5. The substrate processing apparatus of claim 4 ,
wherein the arm supporting unit further comprises a second holding seal member,
the second holding seal member is configured to support the first pipe to form a sealed space within the arm supporting unit, and
the mixing region is provided within the sealed space.

6. The substrate processing apparatus of claim 1 ,
wherein the nozzle is equipped with a nozzle tip having a discharge opening for the processing fluid,
the leading end portion of the first pipe is welded or thermally bonded to the nozzle tip.

7. The substrate processing apparatus of claim 2 ,
wherein the arm supporting unit further comprises a rotation stop pin,
the rotation stop pin is configured to suppress the rotation of the second pipe.

8. The substrate processing apparatus of claim 1 ,
wherein the first pipe and the third pipe are made of thermoplastic resins, and
the second pipe is made of a metal.

9. The substrate processing apparatus of claim 1 ,
wherein the processing fluid is a mixed solution of sulfuric acid and hydrogen peroxide.

Assignees

• Tokyo Electron Ltd

Inventors

• Higashijima Jiro
• Ogata Nobuhiro

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/50

  characterised by the part to be cleaned · CPC title

• H10P72/0418 Primary

  for etching · CPC title

• G03F7/423 Primary

  containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title