Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

Patent metadata

Field	Value
Publication number	US-9905414-B2
Application number	US-201615161903-A
Country	US
Kind code	B2
Filing date	May 23, 2016
Priority date	Sep 28, 2000
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

First claim

What is claimed is:

1. A process for making an insulating metal oxide layer in a microelectronic device, the process comprising:
alternatingly exposing a substrate to a) a first reactant vapor comprising a metal alkylamide, the metal alkylamide comprising a metal attached to two or more different ligands, at least one of which is an alkylamide, so as to form a deposited metal alkylamide, and b) water, so as to form a metal oxide,
wherein the deposition of the metal alkylamide and water are self-limiting, and
wherein said metal oxide comprises oxygen and the metal from the metal alkylamide.

2. The process of claim 1 , wherein the metal oxide insulates a gate.

3. The process of claim 1 , wherein the metal oxide insulates a capacitor.

4. The process of claim 1 , wherein the substrate has a hole and the metal oxide conformally coats said hole.

5. The process of claim 4 , wherein the hole comprises a trench.

6. The process of claim 4 , wherein the substrate comprises silicon.

7. The process of claim 4 , wherein the metal oxide has a thickness that varies by less than 1%.

8. The process of claim 4 , wherein the metal oxide has a root mean square surface roughness less than 0.4 nm.

9. The process of claim 1 , wherein the metal alkylamide is selected from the group consisting of Al(N(Et)CH 2 CH 2 NMe 2 )(NMe 2 ) 2 , Ga(N(Me)CH 2 CH 2 NMe 2 )(NMe 2 ) 2 , Ta(N t Bu)(NEt 2 ) 3 , Ta(NEt)(NEt 2 ) 3 , W(N t Bu) 2 (NH t Bu) 2 , W(N t Bu) 2 (NEtMe) 2 , V(O)(NMe 2 ) 3 , and W(N t Bu) 2 (NMe 2 ) 2 .

10. The process of claim 9 , wherein the metal alkylamide is Al(N(Et)CH 2 CH 2 N Me 2 )(NMe 2 ) 2 .

11. The process of claim 1 , wherein the metal from the metal alkylamide is selected from the group consisting of aluminum, gallium, tungsten, vanadium, and tantalum.

12. The process of claim 1 , wherein the alternatingly exposing the substrate to the first reactant vapor and water comprises a plurality of cycles.

Assignees

• Harvard College

Inventors

• Gordon Roy Gerald
• Becker Jill S
• Hausmann Dennis
• Suh Seigi

Classifications

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6923

  the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG · CPC title