System, method and apparatus for ion milling in a plasma etch chamber

Patent metadata

Field	Value
Publication number	US-9899227-B2
Application number	US-201313771519-A
Country	US
Kind code	B2
Filing date	Feb 20, 2013
Priority date	Feb 20, 2013
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A system and method of ion milling performed in a plasma etch system including a plasma etch chamber, multiple process gas sources coupled to the plasma etch chamber, a radio frequency bias source and a controller. The plasma etch chamber including a substrate support. The substrate support being a non-pivoting and non-rotating substrate support. The substrate support capable of supporting a substrate to be processed on a top surface of the substrate support without use of a mechanical clamp device. The plasma etch chamber also including an upper electrode disposed opposite from the top surface of the substrate support. The radio frequency bias source is coupled to the substrate support. The controller is coupled to the plasma etch chamber, the multiple process gas sources and the radio frequency bias source. The controller including logic stored on computer readable media for performing an ion milling process in the plasma etch chamber.

First claim

What is claimed is:

1. A method of ion milling comprising:
placing a substrate on a non-pivoting support in a plasma etch chamber;
applying a plasma etch process to the substrate to form a feature;
ending the plasma etch process when the feature is formed;
selecting, responsive to a controller of the plasma etch chamber, an ion angular distribution for an ion milling plasma to be generated from a combination of inert gases that has a plurality of distinct masses by injecting, after the feature is formed, a selected combination of a plurality of ion milling process gases into the plasma etch chamber to define the selected ion angular distribution for the ion milling plasma to be generated, wherein the selected combination of the plurality of ion milling process gases has an increased ratio of a lighter mass ion milling process gas including at least one of helium and neon relative to a heavier mass ion milling process gas including at least one of argon, xenon, and krypton to define a narrow ion angular distribution for the ion milling plasma to be generated, and has an increased ratio of a heavier mass ion milling process gas including at least one of argon, xenon, and krypton relative to a lighter mass ion milling process gas including at least one of helium and neon to define a broad ion angular distribution for the ion milling plasma to be generated;
generating, by applying radio frequency (RF) power to the plasma etch chamber, the ion milling plasma having the selected ion angular distribution, the ion milling plasma producing ions with different transmit times through a plasma sheath of the ion milling plasma; and
volatilizing, using the ion milling plasma, at least one of a plurality of deposits on at least one sidewall of the feature formed in the substrate.

2. The method of claim 1 , wherein injecting the selected combination of the plurality of ion milling process gases into the plasma etch chamber includes determining a location of at least one of the plurality of deposits on the at least one sidewall of the feature formed in the substrate.

3. The method of claim 2 , wherein injecting the selected combination of the plurality of ion milling process gases into the plasma etch chamber includes selecting an ion milling operating pressure.

4. The method of claim 3 , wherein the ion milling operating pressure is between about 60 millitorr and about 300 millitorr.

5. The method of claim 2 , wherein injecting the selected combination of the plurality of ion milling process gases into the plasma etch chamber includes selecting a ratio of the masses of the plurality of ion milling process gases.

6. The method of claim 1 , wherein the RF power applied to the plasma etch chamber has a frequency of between about 200 kHz and about 2 MHz.

7. The method of claim 1 , wherein the narrow ion angular distribution of the ion milling plasma to be generated includes a range from zero degrees from perpendicular to a surface of the substrate to 15 degrees from perpendicular to the surface of the substrate.

8. The method of claim 1 , wherein the broad ion angular distribution of the ion milling plasma to be generated includes a range from zero degrees from perpendicular to a surface of the substrate to 50 degrees from perpendicular to the surface of the substrate.

9. A method, comprising:
subjecting a substrate to plasma etching in a plasma etch chamber to form a feature;
stopping the plasma etching when the feature is formed; and
subjecting, in the same plasma etch chamber used to subject the substrate to plasma etching without removing the substrate from the plasma etch chamber, the substrate to a byproduct removal operation to remove etching byproducts from the feature, the byproduct removal operation including,
introducing a mixture of inert gases into the plasma etch chamber, the mixture of inert gases containing at least one of helium and neon and at least one of argon, xenon, and krypton,
selecting, responsive to a controller of the plasma etch chamber, an ion angular distribution for an ion milling plasma to be generated from the mixture of inert gases by adjusting a pressure of the mixture of inert gases within a range from 60 millitorr to 300 millitorr, wherein the pressure of the mixture of inert gases is adjusted to a lower pressure within the range from 60 millitorr to 300 millitorr to select a narrow ion angular distribution for the ion milling plasma to be generated, the narrow ion angular distribution for the ion milling plasma to be generated including a range from zero degrees from perpendicular to a surface of the substrate to 15 degrees from perpendicular to the surface of the substrate, and the pressure of the mixture of inert gases is adjusted to a pressure within the range from 150 millitorr to 300 millitorr to select a broad ion angular distribution for the ion milling plasma to be generated, the broad ion angular distribution for the ion milling plasma to be generated including a range from zero degrees from perpendicular to a surface of the substrate to 50 degrees from perpendicular to the surface of the substrate,
applying radio frequency (RF) power to the plasma etch chamber at a frequency in a range from 200 KHz to 2 MHz to generate the ion milling plasma having the selected ion angular distribution, and
using the ion milling plasma to remove etching byproducts from a sidewall of the feature.

10. The method of claim 9 , wherein the substrate is placed on a non-pivoting support in the plasma etch chamber.

Assignees

• Lam Res Corp

Inventors

• Guha Joydeep
• Jinnai Butsurin
• Han Jun Hee
• Eppler Aaron

Classifications

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01J37/32926

  Software, data control or modelling · CPC title

• H01J37/32403

  Treating multiple sides of workpieces, e.g. 3D workpieces · CPC title