Adjustable side gas plenum for edge rate control in a downstream reactor
US-10622189-B2 · Apr 14, 2020 · US
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Guha Joydeep patents
Guha Joydeep is listed as an inventor on 29 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Guha Joydeep |
| Total patents | 29 |
| First publication | Jan 15, 2015 |
| Latest publication | Apr 14, 2020 |
Notable patents
Publications ranked by popularity score, then publication date.
System implementing machine learning in complex multivariate wafer processing equipment
US-10615009-B2 · Apr 7, 2020 · US
High aspect ratio etch of oxide metal oxide metal stack
US-10242883-B2 · Mar 26, 2019 · US
High aspect ratio etch of oxide metal oxide metal stack
US-2018374712-A1 · Dec 27, 2018 · US
Dual chamber plasma etcher with ion accelerator
US-10134605-B2 · Nov 20, 2018 · US
System Implementing Machine Learning in Complex Multivariate Wafer Processing Equipment
US-2018247798-A1 · Aug 30, 2018 · US
Method and process of implementing machine learning in complex multivariate wafer processing equipment
US-9972478-B2 · May 15, 2018 · US
Method and Process of Implementing Machine Learning in Complex Multivariate Wafer Processing Equipment
US-2018082826-A1 · Mar 22, 2018 · US
System, method and apparatus for ion milling in a plasma etch chamber
US-9899227-B2 · Feb 20, 2018 · US
Pressure purge etch method for etching complex 3-d structures
US-2018033657-A1 · Feb 1, 2018 · US
Recent patents
Latest publications not already listed above.
Pressure purge etch method for etching complex 3-D structures
US-9870932-B1 · Jan 16, 2018 · US
Systems and methods for selectively etching tungsten in a downstream reactor
US-9837286-B2 · Dec 5, 2017 · US
Adjustable side gas plenum for edge rate control in a downstream reactor
US-2017330728-A1 · Nov 16, 2017 · US
High aspect ratio etch with combination mask
US-9659783-B2 · May 23, 2017 · US
Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
US-9601319-B1 · Mar 21, 2017 · US
Systems and methods for selectively etching tungsten in a downstream reactor
US-2017069511-A1 · Mar 9, 2017 · US
Systems and Methods for Separately Applying Charged Plasma Constituents and Ultraviolet Light in a Mixed Mode Processing Operation
US-2017040170-A1 · Feb 9, 2017 · US
Patterning of a hard mask material
US-9514955-B2 · Dec 6, 2016 · US
Dual chamber plasma etcher with ion accelerator
US-9431269-B2 · Aug 30, 2016 · US
Patterning of a hard mask material
US-2015364337-A1 · Dec 17, 2015 · US
Dual chamber plasma etcher with ion accelerator
US-2015364349-A1 · Dec 17, 2015 · US
Dual chamber plasma etcher with ion accelerator
US-2015364339-A1 · Dec 17, 2015 · US
Dual chamber plasma etcher with ion accelerator
US-9147581-B2 · Sep 29, 2015 · US
High aspect ratio etch with combination mask
US-2015200106-A1 · Jul 16, 2015 · US
Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
US-9082826-B2 · Jul 14, 2015 · US
High aspect ratio etch with combination mask
US-9018103-B2 · Apr 28, 2015 · US
High aspect ratio etch with combination mask
US-2015087154-A1 · Mar 26, 2015 · US
Method and solution for cleaning metal residue
US-2015079786-A1 · Mar 19, 2015 · US
Dual chamber plasma etcher with ion accelerator
US-2015017810-A1 · Jan 15, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Lam Res Corp | 29 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P50/242 | 21 |
| H10P72/0421 | 19 |
| H01J2237/334 | 17 |
| H01L21/67069 | 15 |
| H10P50/71 | 14 |