Narrow source for physical vapor deposition processing

Patent metadata

Field	Value
Publication number	US-9892890-B2
Application number	US-201313871936-A
Country	US
Kind code	B2
Filing date	Apr 26, 2013
Priority date	Apr 26, 2012
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.

First claim

The invention claimed is:

1. A sputtering source for a sputtering chamber, the sputtering chamber having a sputtering zone having zone width and zone length, the zone length defined in the direction of substrate travel, the sputtering source comprising:
an elongated body having width substantially narrower than the zone length, the elongated body having a cross-sectional profile consisting of a back wall, two sidewalls extending forward from the back wall, and two extensions, each extension orthogonally emanating from one of the sidewalls and extending inwardly such that the two extensions define an elongated opening between the extensions and traversing a length of the elongated body;
an elongated target having two elongated grooves traversing the length of the elongated body, one on each side of the elongated target, the elongated target slidably attached to the elongated body over the elongated opening, the elongated target being planer;
an elongated heat sink provided inside the elongated body and configured to freely move towards and away from the extensions;
an elongated magnetic pole provided inside the elongated body and positioned between the elongated heat sink and the back wall, the elongated magnetic pole configured for scanning motion between the two sidewalls in a linear direction; and,
a pneumatic inlet provided at the back wall and configured for delivering pneumatic pressure to press the elongated heat sink towards the extensions;
wherein the two extensions are configured to extend into the two elongated grooves.

2. The sputtering source of claim 1 , wherein the elongated heat sink includes a seal, the seal configured to be pressed against backside of the elongated target when pneumatic pressure is provided via the pneumatic inlet to press the elongated heat sink towards the extensions and against the backside of the elongated target.

3. The sputtering source of claim 2 , further comprising a gas inlet enabling delivery of gas to a void defined by the backside of the elongated target, the elongated heat sink, and the seal, wherein the gas serves to increase thermal conductivity between the elongated heat sink and the elongated target.

4. The sputtering source of claim 1 , wherein the elongated target comprises extruded metal.

5. The sputtering source of claim 4 , wherein the elongated target comprises extruded copper or extruded aluminum.

6. The sputtering source of claim 1 , wherein the elongated target comprises metal machining from bar stock.

7. The sputtering source of claim 1 , wherein the elongated magnetic pole is configured to scan in a direction oblique to the direction of substrate travel.

8. A sputtering chamber for depositing target material on substrates, comprising:
a chamber body defining a processing space for processing substrates in vacuum over a processing zone, the chamber body having a sidewall, the sidewall configured for accepting a plurality of sputtering sources;
a plurality of sputtering sources attached to the sidewall and abutting each other in a row, each of the sputtering sources comprising:
a narrow elongated sputtering source comprising a housing consisting of a sheet of metal bent so as to form a cross-sectional profile consisting of a back wall, two sidewalls extending orthogonally forward from the back wall, and two extensions, each extension orthogonally emanating from one of the two sidewalls and extending inwardly such that the two extensions define an opening traversing a length of the housing;
an elongated target having two elongated grooves traversing the length of the housing, one on each side of the elongated target, the elongated target slidably attached to the housing over the opening, the elongated target being planer;
a heat sink positioned inside the housing and having front side configured to contact backside of the elongated target so as to remove heat from the elongated target, the heat sink sized to move freely front to back;
a magnetic pole positioned inside the housing behind the heat sink, the magnetic pole being mechanized to scan from side to side in a linear direction;
wherein the two extensions are configured to extend into the two elongated grooves.

9. The chamber of claim 8 , wherein the housing further comprises inlet for accepting pneumatic pressure, and wherein the heat sink is configured to be pressed against the backside of the elongated target by the pneumatic pressure.

10. The chamber of claim 9 , wherein the heat sink includes a seal facing the backside of the elongated target.

11. The chamber of claim 10 , wherein the seal comprises an O-ring defining an interior space between the backside of the elongated target and the heat sink, and wherein the housing further comprises a gas inlet for flowing gas into the interior space.

12. The chamber of claim 8 , wherein the elongated target has a width of no more than 100 mm.

13. The chamber of claim 12 , wherein the elongated target has a width of 70-75 mm.

14. The chamber of claim 8 , wherein the chamber body is sized to house and simultaneously process a two-dimensional array of substrates.

15. The chamber of claim 14 , wherein each elongated target has width that is smaller than width of a single substrate.

16. The chamber of claim 14 , further comprising a plurality of substrate carriers, each substrate carrier supporting a one-dimensional array of substrates.

17. The chamber of claim 8 , wherein the elongated target comprises extruded aluminum or extruded copper.

18. The chamber of claim 8 , further comprising a thermal transfer media adhered to front surface of the heat sink.

19. The chamber of claim 8 , further comprising a thin membrane welded to front surface of the heat sink and defining an enclosed volume between the front surface of the heat sink and the backside of the target, the enclosed volume being sealed from vacuum environment and having conduit to atmospheric environment.

20. The chamber of claim 8 , further comprising a fluid conduit formed inside the heat sink and having thermal transfer fluid within the fluid conduit.

Assignees

• Intevac Inc

Inventors

• Bluck Terry
• Riposan Alex

Classifications

• H01J37/32779

  of batches of workpieces · CPC title

• H01J37/3435

  Target holders (includes backing plates and endblocks) · CPC title

• H01J37/3411

  Constructional aspects of the reactor · CPC title

• C23C14/3407

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• C23C14/566

  using a load-lock chamber · CPC title