Method for manufacturing wiring structure, copper displacement plating solution, and wiring structure

Patent metadata

Field	Value
Publication number	US-9888585-B2
Application number	US-201514865143-A
Country	US
Kind code	B2
Filing date	Sep 25, 2015
Priority date	Sep 29, 2014
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

Adhesion of an underlying diffusion barrier metal film and an electroless copper plating film with respect to an insulating film can be improved. A method for manufacturing a wiring structure includes a process of forming the underlying diffusion barrier metal film 5 , including a base metal with respect to copper, on the insulating film 1 ; and a process of forming the electroless copper plating film 6 on the underlying diffusion barrier metal film 5 by performing an electroless copper displacement plating process with a copper displacement plating solution. The copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.

First claim

We claim:

1. A method for manufacturing a wiring structure, comprising:
providing an object to be processed on which an insulating film is formed;
forming an underlying diffusion barrier metal film, including a base metal with respect to copper, on the insulating film; and
forming an electroless copper plating film on the underlying diffusion barrier metal film by performing an electroless copper displacement plating process with a copper displacement plating solution,
wherein the copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.

2. The method for manufacturing a wiring structure of claim 1 ,
wherein the copper displacement plating solution includes TMAH or KOH as a pH adjuster.

3. The method for manufacturing a wiring structure of claim 1 ,
wherein the copper displacement plating solution includes EDTA as a pH stabilizer.

4. The method for manufacturing a wiring structure of claim 1 ,
wherein the copper displacement plating solution includes polyethylene glycol as a surfactant.

Assignees

• Tokyo Electron Ltd
• A School Corporation Kansai Univ

Inventors

• SHINGUHARA Shoso
• Ota Kohei
• Iwashita Mitsuaki
• Mizutani Nobutaka

Classifications

• H05K1/0306

  Inorganic insulating substrates, e.g. ceramic, glass · CPC title

• H05K2201/035

  Paste overlayer, i.e. conductive paste or solder paste over conductive layer · CPC title

• H05K3/422 Primary

  characterised by electroless plating method; pretreatment therefor · CPC title

• H05K2203/025

  Abrading, e.g. grinding or sand blasting · CPC title

• H05K3/0017

  Etching of the substrate by chemical or physical means · CPC title