Bonding wire for semiconductor device

Patent metadata

Field	Value
Publication number	US-9887172-B2
Application number	US-201515305584-A
Country	US
Kind code	B2
Filing date	Sep 17, 2015
Priority date	Aug 12, 2015
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

First claim

The invention claimed is:

1. A bonding wire for a semiconductor device, comprising:
a Cu alloy core material; and
a Pd coating layer formed on a surface of the Cu alloy core material, wherein
the bonding wire contains Ga, and

a concentration of Ga relative to the entire wire is 0.025% by mass or more and 1.5% by mass or less.

2. The bonding wire for a semiconductor device according to claim 1 , wherein a thickness of the Pd coating layer is 0.015 μm or more and 0.150 μm or less.

3. The bonding wire for a semiconductor device according to claim 1 , further comprising an alloy skin layer containing Au and Pd on the Pd coating layer.

4. The bonding wire for a semiconductor device according to claim 3 , wherein a thickness of the alloy skin layer containing Au and Pd is 0.0005 μm or more and 0.050 μm or less.

5. The bonding wire for a semiconductor device according to claim 1 , wherein
the bonding wire further contains one or more elements selected from Ni, Ir, and Pt, and
a concentration of each of the elements relative to the entire wire is 0.011% by mass or more and 1.2% by mass or less.

6. The bonding wire for a semiconductor device according to claim 1 , wherein
the Cu alloy core material contains Pd, and
a concentration of Pd contained in the Cu alloy core material is 0.05% by mass or more and 1.2% by mass or less.

7. The bonding wire for a semiconductor device according to claim 1 , wherein
the bonding wire further contains at least one element selected from B, P, and Mg, and
a concentration of each of the elements relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less.

8. The bonding wire for a semiconductor device according to claim 1 , in a measurement result when measuring crystal orientations on a surface of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a longitudinal direction has a proportion of 30% or more and 100% or less among crystal orientations in the longitudinal direction of the bonding wire.

9. The bonding wire for a semiconductor device according to claim 1 , wherein Cu is present in an outermost surface of the bonding wire.

Assignees

• Nippon Micrometal Corp
• Nippon Steel & Sumikin Mat Co

Inventors

• Oda Daizo
• Eto Motoki
• Saito Kazuyuki
• Haibara Teruo
• Oishi Ryo
• Yamada Takashi
• Uno Tomohiro

Classifications

• H10W72/015

  of bond wires · CPC title

• H10W72/01515

  Forming coatings · CPC title

• H10W72/522

  Multilayered bond wires, e.g. having a coating concentric around a core · CPC title

• H10W72/50 Primary

  Bond wires · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title