Method of fabricating group III nitride with gradually degraded crystal structure
US-9822465-B2 · Nov 21, 2017 · US
using ammonia as solvent, i.e. ammonothermal processes
using ammonia as solvent, i.e. ammonothermal processes · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B7/105 |
| Official title | {using ammonia as solvent, i.e. ammonothermal processes} |
| Display label | using ammonia as solvent, i.e. ammonothermal processes |
| Total patents | 143 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 20 |
| 2016 | 23 |
| 2017 | 20 |
| 2018 | 17 |
| 2019 | 16 |
| 2020 | 14 |
| 2021 | 11 |
| 2022 | 5 |
| 2023 | 9 |
| 2024 | 4 |
| 2025 | 3 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
US-2017327971-A1 · Nov 16, 2017 · US
Free-standing substrate, function element and method for producing same
US-2017330749-A1 · Nov 16, 2017 · US
Method of fabricating bulk group III nitride crystals in supercritical ammonia
US-9790616-B2 · Oct 17, 2017 · US
Group III nitride bulk crystals and their fabrication method
US-9790617-B2 · Oct 17, 2017 · US
High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
US-9783910-B2 · Oct 10, 2017 · US
Group 13 nitride crystal and group 13 nitride crystal substrate
US-9732435-B2 · Aug 15, 2017 · US
Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia
US-9670594-B2 · Jun 6, 2017 · US
Large area nitride crystal and method for making it
US-2017145585-A1 · May 25, 2017 · US
Large area seed crystal for ammonothermal crystal growth and method of making
US-9650723-B1 · May 16, 2017 · US
High quality group-III metal nitride crystals, methods of making, and methods of use
US-9589792-B2 · Mar 7, 2017 · US
Method for producing nitride crystal and nitride crystal
US-2017051434-A1 · Feb 23, 2017 · US
Large area nitride crystal and method for making it
US-9564320-B2 · Feb 7, 2017 · US
Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US-2017029978-A1 · Feb 2, 2017 · US
Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
US-9551088-B2 · Jan 24, 2017 · US
Boron nitride and method of producing boron nitride
US-2017018357-A1 · Jan 19, 2017 · US
Transparent group III metal nitride and method of manufacture
US-9543392-B1 · Jan 10, 2017 · US
High pressure reactor and method of growing group iii nitride crystals in supercritical ammonia
US-2016376727-A1 · Dec 29, 2016 · US
High pressure reactor and method of growing group iii nitride crystals in supercritical ammonia
US-2016376726-A1 · Dec 29, 2016 · US
Method for producing nitride crystal and nitride crystal
US-9518337-B2 · Dec 13, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B7/105?
- CPC C30B7/105 is the Cooperative Patent Classification code for “using ammonia as solvent, i.e. ammonothermal processes.”
- How many patents are filed under CPC C30B7/105 (using ammonia as solvent, i.e. ammonothermal processes)?
- Our database includes 143 publications tagged with this CPC code.
- Is patent activity under CPC C30B7/105 growing?
- Publication counts under this code: 4 in 2024 vs 3 in 2025 (latest complete years).