Method of fabricating piezoelectric energy harvesting device

US9876161B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9876161-B2
Application numberUS-201615159903-A
CountryUS
Kind codeB2
Filing dateMay 20, 2016
Priority dateDec 6, 2012
Publication dateJan 23, 2018
Grant dateJan 23, 2018

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Abstract

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A method of fabricating a flexible piezoelectric energy harvesting device is provided. The method includes forming a piezoelectric layer to include a plurality of first piezoelectric lines spaced apart from each other in one direction and a plurality of second piezoelectric lines respectively filling spaces between the first piezoelectric lines, then placing the piezoelectric layer on a first flexible electrode substrate to come in direct contact with the first flexible electrode, and forming a second flexible electrode substrate on the piezoelectric layer.

First claim

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What is claimed is: 1. A method of fabricating a flexible piezoelectric energy harvesting device, the method comprising: forming a piezoelectric layer, including forming a plurality of first piezoelectric lines spaced apart from each other in one direction and forming a plurality of second piezoelectric lines respectively filling spaces between the first piezoelectric lines; then placing the piezoelectric layer on a first flexible electrode substrate to come in direct contact with the first flexible electrode substrate; and forming a second flexible electrode substrate on the piezoelectric layer. 2. The method of claim 1 , wherein the first and second flexible electrode substrates include a conductive material. 3. The method of claim 1 , wherein each of the first and second flexible electrode substrates comprises: an insulating polymer layer; and an electrode pattern disposed on a surface of the insulating polymer layer which is adjacent to the piezoelectric layer. 4. The method of claim 3 , wherein the electrode pattern of each of the first and second flexible electrode substrates has an interdigitated electrode (IDE) structure. 5. The method of claim 1 , wherein forming the piezoelectric layer comprises: forming a first piezoelectric layer on a sacrificial substrate; patterning the first piezoelectric layer to form the first piezoelectric lines spaced apart from each other in the one direction; forming the second piezoelectric lines filling the spaces between the first piezoelectric lines, respectively; and then moving the first piezoelectric layer including the first and second piezoelectric lines disposed on the sacrificial substrate onto the first flexible electrode substrate. 6. The method of claim 5 , wherein the first piezoelectric layer is formed of a piezoelectric ceramic material or a single-crystalline material. 7. The method of claim 6 , wherein the piezoelectric ceramic material includes lead zirconate titanate (PZT) or lead-free ceramic materials. 8. The method of claim 6 , wherein the single-crystalline material includes lead magnesium niobate-lead titanate (PMN-PT), lead magnesium niobate-lead zirconate titanate (PMN-PZT), lead indium niobate-lead titanate (PIN-PT), or lead zirconate niobate-lead titanate (PZN-PT). 9. The method of claim 5 , wherein each of the first piezoelectric lines is formed to have a quadrilateral cross section in another direction crossing the one direction. 10. The method of claim 5 , wherein the second piezoelectric lines are formed of a piezoelectric polymer material; and wherein the piezoelectric polymer material includes a polyvinylidene difluoride (PVDF) polymer-based piezoelectric material, or a polyvinylidene difluoride-trifluoroethylene (PVDF-TrFE) polymer-based piezoelectric material. 11. The method of claim 1 , wherein the second flexible electrode substrate is formed as a metal substrate, and the piezoelectric layer is placed on the second flexible electrode substrate such that an entire bottom surface of the piezoelectric layer is covered by and in contact with the metal substrate. 12. The method of claim 1 , wherein the second flexible electrode substrate includes a metal sheet, and the piezoelectric layer is placed on the second flexible electrode substrate such that an entire bottom surface of the piezoelectric layer is covered by and in contact with the metal sheet. 13. The method of claim 1 , wherein the first flexible electrode substrate is formed as a metal substrate, and the first flexible electrode substrate is formed on the piezoelectric layer such that the metal substrate covers and contacts an entire top surface of the piezoelectric layer. 14. The method of claim 1 , wherein the first flexible electrode substrate includes a metal sheet, and the first flexible electrode substrate is formed on the piezoelectric layer such that the metal sheet covers and contacts an entire top surface of the piezoelectric layer.

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What does patent US9876161B2 cover?
A method of fabricating a flexible piezoelectric energy harvesting device is provided. The method includes forming a piezoelectric layer to include a plurality of first piezoelectric lines spaced apart from each other in one direction and a plurality of second piezoelectric lines respectively filling spaces between the first piezoelectric lines, then placing the piezoelectric layer on a first f…
Who is the assignee on this patent?
Electronics & Telecommunications Res Inst
What technology area does this patent fall under?
Primary CPC classification H01L41/312. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 23 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).