Method for manufacturing composite piezoelectric substrate

Patent metadata

Field	Value
Publication number	US-9385301-B2
Application number	US-201314068007-A
Country	US
Kind code	B2
Filing date	Oct 31, 2013
Priority date	Dec 25, 2007
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

A method for manufacturing a composite piezoelectric substrate capable of forming an ultra-thin piezoelectric film includes preparing a piezoelectric substrate and a supporting substrate, implanting ions from a surface of the piezoelectric substrate to form a defective layer in a region of the piezoelectric substrate, removing impurities that are adhered to at least one of the surface of the piezoelectric substrate in which the defective layer is formed and a surface of the supporting substrate to directly expose the constituent atoms of the surfaces and to activate the surfaces, bonding the supporting substrate to the surface of the piezoelectric substrate to form a bonded substrate body, and separating the bonded substrate body at the defective layer formed in the piezoelectric substrate so that a separation layer between the surface of the piezoelectric substrate and the defective layer is separated from the piezoelectric substrate.

First claim

What is claimed is:

1. A method for manufacturing a composite piezoelectric substrate comprising:
a first step of preparing a piezoelectric substrate and a supporting substrate;
a second step of implanting ions from a surface of the piezoelectric substrate to form a defective layer in a region at a predetermined depth from the surface of the piezoelectric substrate;
a third step of bonding the supporting substrate to the surface of the piezoelectric substrate to form a substrate bonded body;
a fourth step of separating the substrate bonded body at the defective layer formed in the piezoelectric substrate so that a separation layer between the surface of the piezoelectric substrate and the defective layer is separated from the piezoelectric substrate and bonded to the supporting substrate to form the composite piezoelectric substrate;
a fifth step of smoothing the surface of the separation layer of the composite piezoelectric substrate; and
a polarization step of polarizing the separation layer of the composite piezoelectric substrate after the second step and before the third step, or after the third step to correct polarization inversion of piezoelectric material in the separation layer.

2. The method for manufacturing a composite piezoelectric substrate according to claim 1 , wherein the polarization step is a step in which an electric field is intermittently applied to the separation layer.

3. The method for manufacturing a composite piezoelectric substrate according to claim 1 , wherein the polarization step is performed at a heating temperature of at least about 100° C. less than the Curie temperature of the piezoelectric substrate.

4. The method for manufacturing a composite piezoelectric substrate according to claim 1 , the polarization step is performed at a heating temperature of about 200° C. or more.

5. The method for manufacturing a composite piezoelectric substrate according to claim 1 , further comprising:
a step of depositing a small amount of metal elements at a bonding interface between the supporting substrate and the surface of the piezoelectric substrate.

6. The method for manufacturing a composite piezoelectric substrate according to claim 1 , wherein
a lithium-based piezoelectric material is used for the piezoelectric substrate.

Assignees

• Murata Manufacturing Co

Inventors

• Kando Hajime
• Yoshii Yoshiharu

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• G02F1/035

  in an optical waveguide structure · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title

• Y10T29/49005

  Acoustic transducer · CPC title