Method for manufacturing piezoelectric device with a composite piezoelectric substrate

US9508918B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9508918-B2
Application numberUS-201414492223-A
CountryUS
Kind codeB2
Filing dateSep 22, 2014
Priority dateMay 17, 2010
Publication dateNov 29, 2016
Grant dateNov 29, 2016

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  5. First independent claim

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Abstract

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A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

First claim

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What is claimed is: 1. A method for manufacturing a composite piezoelectric substrate that includes a piezoelectric thin film supported by a supporting substrate, the method comprising: an ion implantation step of implanting an ionized element into a surface of a piezoelectric substrate to form a portion of the piezoelectric substrate having a peak concentration of the ionized element; a temporary supporting step of forming a temporary supporting substrate on a side of the ion-i…

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What does patent US9508918B2 cover?
A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a…
Who is the assignee on this patent?
Murata Manufacturing Co
What technology area does this patent fall under?
Primary CPC classification H01L41/37. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).