Process chamber having separate process gas and purge gas regions

Patent metadata

Field	Value
Publication number	US-9870919-B2
Application number	US-201313864849-A
Country	US
Kind code	B2
Filing date	Apr 17, 2013
Priority date	Apr 25, 2012
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

First claim

We claim:

1. An apparatus, comprising:
a lower dome;
a chamber body coupled to the lower dome;
an upper dome coupled to the chamber body;
a substrate support disposed within the chamber body, the substrate support vertically actuatable between a loading position and a processing position;
a process gas inlet formed in the chamber body and a process gas outlet formed in the chamber body for flowing a process gas laterally above the substrate support, wherein the process gas inlet and the process gas outlet are disposed in a first plane, and the process gas inlet and the process gas outlet are disposed above the substrate support when the substrate support is in the processing position; and
a purge gas inlet formed in the chamber body and a purge gas outlet formed in the chamber body for flowing a purge gas laterally below the substrate support, wherein the purge gas inlet and the purge gas outlet are disposed in a second plane, the first plane is parallel to the second plane, and the purge gas inlet and the purge gas outlet are disposed below the substrate support when the substrate support is in the processing position.

2. The apparatus of claim 1 , further comprising a first exhaust pump coupled to the process gas outlet, and a second exhaust pump coupled to the purge gas outlet.

3. The apparatus of claim 1 , further comprising a shield disposed around the perimeter of the substrate support in contact with the chamber body.

4. The apparatus of claim 1 , wherein the process gas inlet and the purge gas inlet are located on a side of the chamber body opposite of the process gas outlet and the purge gas outlet.

5. An apparatus, comprising:
a chamber body;
a substrate support disposed within the chamber body, the substrate support vertically actuatable between a loading position and a processing position;
a process gas inlet and a process gas outlet disposed laterally above the substrate support when the substrate support is in the processing position, wherein the process gas inlet and the process gas outlet are disposed in a first plane and are adapted to direct a process gas laterally over the surface of a substrate disposed on the substrate support; and
a purge gas inlet and a purge gas outlet disposed below the substrate support when the substrate support is in the processing position, wherein the purge gas inlet and the purge gas outlet are disposed in a second plane and are adapted to direct a purge gas laterally below the plane of the substrate, wherein the first plane is parallel to the second plane, and wherein the process gas inlet and the purge gas inlet are located on a side of the chamber body opposite of the process gas outlet and the purge gas outlet.

6. The apparatus of claim 5 , further comprising a first exhaust pump coupled to the process gas outlet, and a second exhaust pump coupled to the purge gas outlet.

7. The apparatus of claim 6 , further comprising a shield disposed around the perimeter of the substrate support in contact with the chamber body.

8. The apparatus of claim 1 , further comprising:
a plurality of lamps positioned adjacent to the lower dome and adapted to direct radiant energy towards the substrate support, wherein the lower dome comprises an optically transparent material.

9. The apparatus of claim 5 , further comprising:
an upper dome coupled to an upper portion of the chamber body;
a lower dome comprising an optically transparent material coupled to a lower portion of the chamber body; and
a plurality of lamps positioned adjacent to the lower dome and adapted to direct radiant energy towards the substrate support.

Assignees

• Ranish Joseph M
• Brillhart Paul
• Marin Jose Antonio
• Kuppurao Satheesh
• Ramachandran Balasubramanian
• Srinivasan Swaminathan T
• Samir Mehmet Tugrul
• Applied Materials Inc

Inventors

• Ranish Joseph M
• Brillhart Paul
• Marin Jose Antonio
• Kuppurao Satheesh
• Ramachandran Balasubramanian
• Srinivasan Swaminathan T
• Samir Mehmet Tugrul

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• H01L21/0262 Primary

  Electricity · mapped topic