Materials for near field transducers and near field transducers containing same

Patent metadata

Field	Value
Publication number	US-9870793-B2
Application number	US-201615064977-A
Country	US
Kind code	B2
Filing date	Mar 9, 2016
Priority date	Jun 24, 2013
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

First claim

What is claimed is:

1. A method of forming a near field transducer (NFT) layer, the method comprising:
depositing a film of a primary element, the film having a film thickness and a film expanse; and
implanting at least one secondary element into the primary element,
wherein the NFT layer comprises the film of the primary element doped with the at least one secondary element.

2. The method according to claim 1 , wherein the at least one secondary element is implanted using beam line implanting, or plasma immersion implanting.

3. The method according to claim 1 , wherein the concentration of the at least one secondary element is not constant across the thickness of the film.

4. The method according to claim 1 , wherein the concentration of the at least one secondary element is not constant across the expanse of the film.

5. The method according to claim 1 , wherein the at least one secondary element is implanted at more than one energy.

6. The method according to claim 1 further comprising annealing after implanting the at least one secondary element.

7. The method according to claim 6 further comprising depositing a metal or dielectric layer on the implanted film before annealing.

8. The method according to claim 6 further comprising implanting at least one secondary element after annealing.

9. The method according to claim 1 further comprising patterning the NFT layer into a NFT.

10. The method according to claim 1 further comprising depositing a metal or dielectric layer on the film of primary element before implanting the at least one secondary element.

11. A method of forming a peg of a near field transducer (NFT), the method comprising:
depositing a primary element to form a primary element film or layer;
defining a peg of the NFT from the primary element film or layer;
forming the peg of the NFT;
encapsulating the peg with an encapsulation layer;
defining an implant; and
implanting at least one secondary element in the implant area of the primary element film to form the peg of the NFT.

12. The method according to claim 11 , wherein the step of defining the implant comprises using a mask so that only the implant area is exposed.

13. The method according to claim 11 further comprising annealing after implanting the at least one secondary element.

14. The method according to claim 13 further comprising at least one additional implanting step and at least one additional annealing step.

15. The method according to claim 11 further comprising removing at least a portion of the encapsulation layer after implanting the at least one secondary element.

16. The method according to claim 15 further comprising depositing a dielectric material after removing at least a portion of the encapsulation layer.

17. A method of forming a plurality of magnetic heads, each of the magnetic heads comprising an alloyed peg of a NFT, the method comprising:
depositing a primary element on a substrate to form a primary element film or layer;
forming a plurality of pegs of the NFTs;
slicing the substrate into rows, each row containing a plurality of pegs;
depositing head overcoat material on each row; and
implanting at least one secondary element in the primary element film of the peg to form an alloyed peg of a NFT.

18. The method according to claim 17 , wherein the step of implanting comprises using a mask so that only the implant area is exposed to the at least one secondary element.

19. The method according to claim 17 further comprising depositing additional head overcoat material after implanting the at least one secondary element.

Assignees

• Seagate Technology Llc

Inventors

• Jayashankar Sethuraman
• Kautzky Michael C

Classifications

• C22C27/06

  Alloys based on chromium · CPC title

• C22C9/00

  Alloys based on copper · CPC title

• C22C9/05

  with manganese as the next major constituent · CPC title

• C01G5/00

  Compounds of silver · CPC title

• C22C5/10

  with cadmium as the next major constituent · CPC title