Cleaning composition and method of manufacturing metal wiring using the same

Patent metadata

Field	Value
Publication number	US-9869027-B2
Application number	US-201615134672-A
Country	US
Kind code	B2
Filing date	Apr 21, 2016
Priority date	Nov 15, 2013
Publication date	Jan 16, 2018
Grant date	Jan 16, 2018

Abstract

A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

First claim

What is claimed is:

1. A cleaning composition comprising:
about 0.01 to about 5 wt % of a chelating agent, wherein the chelating agent comprises an amino acid compound, wherein the amino acid compound comprises at least one of glycine, ethylenediaminetetraacetic acid, and cyclohexanediaminetetraacetic acid;
about 0.01 to about 0.5 wt % of an organic acid, wherein the organic acid comprises at least one of a lactic acid alkyl ester and an acetic acid alkyl ester;
about 0.01 to about 1.0 wt % of an inorganic acid, wherein the inorganic acid comprises at least one of hydrochloric acid, phosphoric acid, nitric acid, sulfuric acid, hydrofluoric acid, bromic acid, and iodic acid;
about 0.01 to about 5 wt % of an alkali compound, wherein the alkali compound comprises at least one of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, and trimethylammonium chloride; and
deionized water.

2. The cleaning composition according to claim 1 , wherein the cleaning composition has a pH of about 1 to about 6.

3. The cleaning composition according to claim 1 , wherein the cleaning composition has a pH of about 8 to about 13.

4. The cleaning composition according to claim 1 , further comprising about 0.01 to about 3 wt % of a corrosion inhibitor.

5. The cleaning composition according to claim 4 , wherein the corrosion inhibitor comprises a benzene carboxylic acid-based material or a benzotriazole-based material.

6. A cleaning composition comprising:
about 0.01 to about 3 wt % of a corrosion inhibitor;
about 0.01 to about 0.5 wt % of an organic acid, wherein the organic acid comprises at least one of a lactic acid alkyl ester and an acetic acid alkyl ester;
about 0.01 to about 1.0 wt % of an inorganic acid, wherein the inorganic acid comprises at least one of hydrochloric acid, phosphoric acid, nitric acid, sulfuric acid, hydrofluoric acid, bromic acid, and iodic acid;
about 0.01 to about 5 wt % of an alkali compound, wherein the alkali compound comprises at least one of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, and trimethylammonium chloride; and
deionized water.

7. The cleaning composition according to claim 6 , wherein the corrosion inhibitor comprises a benzene carboxylic acid-based material or a benzotriazole-based material.

8. The composition according to claim 7 , wherein the benzotriazole-based material comprises at least one of 6-chloro-1-methoxy-benzotriazole, 2,2′-[(1Hbenzotriazol-1-ylmethyl)imino]bisethanol, 1H-thiazolo[4,5-d]-1,2,3-triazole, and 5-methyl-9CI.

9. A method of manufacturing a metal wiring, the method comprising:
forming a first conductive layer on a substrate;
forming a second conductive layer on the first conductive layer;
cleaning the second conductive layer using a cleaning composition;
forming a photoresist layer pattern on the second conductive layer, and
etching the first conductive layer and the second conductive layer,
wherein the cleaning composition comprises
about 0.01 to about 5 wt % of a chelating agent, wherein the chelating agent comprises an amino acid compound, wherein the amino acid compound comprises at least one of glycine, ethylenediaminetetraacetic acid, and cyclohexanediaminetetraacetic acid;
about 0.01 to about 0.5 wt % of an organic acid, wherein the organic acid comprises at least one of a lactic acid alkyl ester and an acetic acid alkyl ester;
about 0.01 to about 1.0 wt % of an inorganic acid, wherein the inorganic acid comprises at least one of hydrochloric acid, phosphoric acid, nitric acid, sulfuric acid, hydrofluoric acid, bromic acid, and iodic acid;
about 0.01 to about 5 wt % of an alkali compound, wherein the alkali compound comprises at least one of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, and trimethylammonium chloride; and
deionized water.

10. The method according to claim 9 , wherein the cleaning composition further comprises about 0.01 to about 3 wt % of a corrosion inhibitor.

11. The method according to claim 9 , wherein the corrosion inhibitor comprises a benzene carboxylic acid-based material or a benzotriazole-based material.

12. The method according to claim 9 , wherein the substrate is formed of glass, the first conductive layer is formed of titanium (Ti), and the second conductive layer is formed of copper (Cu).

13. The composition according to claim 1 , wherein the chelating agent is cyclohexanediaminetetraacetic acid.

Assignees

• Samsung Display Co Ltd
• Ltcam Co Ltd

Inventors

• Kim Bong-Yeon
• Ju Jin-Ho
• Woo Jun-Hyuk
• Song Jung-Hwan
• Lee Seok-Ho
• Jeon Seong-Sik
• Han Jong-Su

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H05K2203/125

  Inorganic compounds, e.g. silver salt · CPC title

• C23F1/16 Primary

  Acidic compositions (C23F1/42 takes precedence) · CPC title

• H05K3/388

  by the use of a metallic or inorganic thin film adhesion layer · CPC title

• H05K2203/124

  Heterocyclic organic compounds, e.g. azole, furan · CPC title