Method for manufacturing magnetoresistive element

Patent metadata

Field	Value
Publication number	US-9865805-B2
Application number	US-201514742169-A
Country	US
Kind code	B2
Filing date	Jun 17, 2015
Priority date	Dec 20, 2012
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

First claim

The invention claimed is:

1. A method for manufacturing a magnetoresistive element comprising the steps of:
forming one of a magnetization free layer and a magnetization pinned layer;
forming a tunnel barrier layer on top of the formed one of the magnetization free layer and the magnetization pinned layer; and
forming the other of the magnetization free layer and the magnetization pinned layer on top of the tunnel barrier layer,
wherein forming the tunnel barrier layer comprises the sub-steps of:
depositing a metal film on top of a substrate, and
subjecting the metal film to an oxidation process,

wherein the oxidation step comprises the sub-steps of, in this order:
holding the substrate having the metal film formed thereon, on a supporting portion protruding from a substrate holding surface of a substrate holder in a processing container in which the oxidation process is performed,
supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, in a state where the substrate is mounted on the supporting portion,
stopping the introduction of the oxygen gas,

mounting the substrate on the substrate holding surface,
reintroducing the oxygen gas into the processing container by supplying the oxygen gas while moving the substrate closer to an oxygen gas introduction unit provided in the processing container and configured to introduce the oxygen gas thereinto,
stopping the introduction of the oxygen gas, and
heating the substrate mounted on the substrate holding surface.

2. The method for manufacturing the magnetoresistive element according to claim 1 , wherein the supplying oxygen step includes introducing the oxygen gas at a temperature at which the metal film does not sublime.

3. The method for manufacturing the magnetoresistive element according to claim 1 , wherein the substrate holding surface is heated before the mounting the substrate step.

4. The method for manufacturing the magnetoresistive element according to claim 1 , wherein the oxygen gas reintroduction step includes introducing the oxygen gas, while rotating the substrate in an in-plane direction of the substrate.

5. The method for manufacturing the magnetoresistive element according to claim 1 , wherein the metal film is magnesium.

6. A method for manufacturing a magnetoresistive element comprising the steps of:
forming one of a magnetization free layer and a magnetization pinned layer;
forming a tunnel barrier layer on top of the formed one of the magnetization free layer and the magnetization pinned layer; and
forming the other of the magnetization free layer and the magnetization pinned layer on top of the tunnel barrier layer,
wherein forming the tunnel barrier layer comprises the sub-steps of:
depositing a metal film on top of a substrate, and
subjecting the metal film to an oxidation process,

wherein the oxidation step comprises the sub-steps of:
holding the substrate having the metal film formed thereon, on a supporting portion protruding from a substrate holding surface of a substrate holder in a processing container in which the oxidation process is performed,
supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, in a state where the substrate is mounted on the supporting portion, at a temperature at which the metal film does not sublime,
mounting the substrate on the substrate holding surface, after start of the introduction of the oxygen gas, and
heating the substrate simultaneously with or after the introduction of the oxygen gas,

wherein the oxidation step further comprises a step of, after the holding step, forming in the processing container a space formed by a substrate holding surface of the substrate holder and a surrounding portion provided in the processing container, by changing a relative position of the substrate holder with respect to the processing container,
wherein the space is formed such that the substrate holding surface is surrounded by the surrounding portion and a gap is formed between the surrounding portion and the substrate holder, and
wherein the oxygen gas introduced into the space is evacuated from the space through the gap.

7. The method for manufacturing the magnetoresistive element according to claim 6 , wherein the heating step includes heating the substrate mounted on the substrate holding surface.

8. The method for manufacturing the magnetoresistive element according to claim 7 , wherein the substrate holding surface is heated before the mounting the substrate step.

9. The method for manufacturing the magnetoresistive element according to claim 8 , wherein the introduction of the oxygen gas is stopped before the mounting the substrate step, and
wherein the method for manufacturing further comprises an oxygen gas reintroduction step of introducing the oxygen gas into the processing container, after the mounting the substrate step.

10. The method for manufacturing the magnetoresistive element according to claim 9 , wherein the oxygen gas reintroduction step includes introducing the oxygen gas, while moving the substrate closer to an oxygen gas introduction unit provided in the processing container and configured to introduce the oxygen gas thereinto.

11. The method for manufacturing the magnetoresistive element according to claim 9 , wherein the oxygen gas reintroduction step includes supplying the oxygen gas, while rotating the substrate in an in-plane direction of the substrate.

12. The method for manufacturing the magnetoresistive element according to claim 6 , wherein the metal film is magnesium.

13. The method for manufacturing the magnetoresistive element according to claim 6 , wherein the supporting portion is configured to be switchable between a protruding condition in which the supporting portion protrudes from the substrate holding surface so that the substrate is apart from the substrate holding surface and a housed condition in which the supporting portion is housed in the substrate holding surface,
wherein the holding the substrate step is performed while the supporting portion is in the protruding condition, and
wherein the mounting the substrate step is performed by switching the supporting portion to be in the housed position.

14. A method for manufacturing a magnetoresistive element comprising the steps of:
forming one of a magnetization free layer and a magnetization pinned layer;
forming a tunnel barrier layer on top of the formed one of the magnetization free layer and the magnetization pinned layer; and
forming the other of the magnetization free layer and the magnetization pinned layer on top of the tunnel barrier layer,
wherein forming the tunnel barrier layer comprises the sub-steps of:
depositing a metal film on top of a substrate, and
subjecting the metal film to an oxidation process,

wherein the oxidation step comprises the sub-steps of:
holding the substrate having the metal film formed thereon, on a supporting portion protruding from a substrate holding surface of a substrate holder in a processing container in which the oxidation process is performed,
supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, in a state where the substrate is mounted on the supporting portion,
mounting the substrate on the substrate holding surface, after start of introduction of the oxygen gas, and
heating the substrate mounted on the substrate holding surface,

wherein the supporting portion is configured to be switchable between a protruding condition in which the supporting portion protrudes from the substrate holding surface so

Assignees

• Canon Anelva Corp

Inventors

• Seino Takuya
• Nishimura Kazumasa
• Okuyama Hiroki
• Otani Yuichi
• Murooka Yuta
• Shimane Yoshimitsu

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title

• H10P14/6326

  Deposition processes · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/32

  characterised by intermediate layers between substrates and deposited layers · CPC title