Semiconductor device and related fabrication method
US-2024234370-A1 · Jul 11, 2024 · US
Deposition processes
Deposition processes · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/6326 |
| Official title | {Deposition processes} |
| Display label | Deposition processes |
| Total patents | 280 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 22 |
| 2016 | 35 |
| 2017 | 29 |
| 2018 | 17 |
| 2019 | 35 |
| 2020 | 35 |
| 2021 | 20 |
| 2022 | 18 |
| 2023 | 18 |
| 2024 | 20 |
| 2025 | 25 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-2024014294-A1 · Jan 11, 2024 · US
Method and Structure to Fabricate Closely Packed Hybrid Nanowires at Scaled Pitch
US-2017170073-A1 · Jun 15, 2017 · US
Method for selectively depositing a layer on a three dimensional structure
US-2016379827-A1 · Dec 29, 2016 · US
Hydrogen-free amorphous dielectric insulating thin films with no tunneling states
US-9530535-B2 · Dec 27, 2016 · US
Flowable carbon for semiconductor processing
US-9514932-B2 · Dec 6, 2016 · US
Electrostatic Chuck and Method of Making Same
US-2016336210-A1 · Nov 17, 2016 · US
External substrate rotation in a semiconductor processing system
US-2016315000-A1 · Oct 27, 2016 · US
Method of semiconductor integrated circuit fabrication
US-9478430-B2 · Oct 25, 2016 · US
Method for forming semiconductor device structure
US-2016307816-A1 · Oct 20, 2016 · US
Semiconductor device structures
US-2016307839-A1 · Oct 20, 2016 · US
Replacement metal gate dielectric cap
US-2016308026-A1 · Oct 20, 2016 · US
Plasma treated semiconductor dichalcogenide materials and devices therefrom
US-9472396-B2 · Oct 18, 2016 · US
MOS transistor having a gate dielectric with multiple thicknesses
US-9466715-B2 · Oct 11, 2016 · US
Replacement metal gate dielectric cap
US-2016293731-A1 · Oct 6, 2016 · US
Semiconductor fuses with nanowire fuse links and fabrication methods thereof
US-2016284643-A1 · Sep 29, 2016 · US
Method for selectively depositing a layer on a three dimensional structure
US-9453279-B2 · Sep 27, 2016 · US
High-quality GaN high-voltage HFETs on silicon
US-9437688-B2 · Sep 6, 2016 · US
Deposition apparatus
US-2016248049-A1 · Aug 25, 2016 · US
Method of intercalating insulating layer between metal and graphene layer and method of fabricating semiconductor device using the intercalation method
US-2016247942-A1 · Aug 25, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/6326?
- CPC H10P14/6326 is the Cooperative Patent Classification code for “Deposition processes.”
- How many patents are filed under CPC H10P14/6326 (Deposition processes)?
- Our database includes 280 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/6326 growing?
- Publication counts under this code: 20 in 2024 vs 25 in 2025 (latest complete years).