Crystal pulling systems having a cover member for covering the silicon charge
US-12157954-B2 · Dec 3, 2024 · US
Double crucible methods
Double crucible methods · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/12 |
| Official title | Double crucible methods |
| Display label | Double crucible methods |
| Total patents | 83 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 5 |
| 2017 | 5 |
| 2018 | 5 |
| 2019 | 3 |
| 2020 | 1 |
| 2021 | 6 |
| 2022 | 8 |
| 2023 | 18 |
| 2024 | 16 |
| 2025 | 7 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
Apparatus for continuously growing ingot
US-2023407518-A1 · Dec 21, 2023 · US
Premelter for preliminarily melting silicon to be supplied to main crucible and control method thereof
US-2023374696-A1 · Nov 23, 2023 · US
Ingot growing apparatus
US-2023366124-A1 · Nov 16, 2023 · US
Apparatus for continuously growing ingot
US-2023366122-A1 · Nov 16, 2023 · US
Continuous ingot growth apparatus and control method thereof
US-2023366123-A1 · Nov 16, 2023 · US
Ingot growth apparatus and control method thereof
US-2023332326-A1 · Oct 19, 2023 · US
Use of buffer members during growth of single crystal silicon ingots
US-11767610-B2 · Sep 26, 2023 · US
Methods and devices for growing crystals with high uniformity without annealing
US-2023295834-A1 · Sep 21, 2023 · US
Apparatus and method for continuous crystal pulling
US-11739436-B2 · Aug 29, 2023 · US
Methods for forming a unitized crucible assembly
US-2023220582-A1 · Jul 13, 2023 · US
Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US-2023212779-A1 · Jul 6, 2023 · US
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
US-2023212778-A1 · Jul 6, 2023 · US
Methods and devices for growing crystals with high uniformity without annealing
US-11655557-B2 · May 23, 2023 · US
Crystal pulling systems having a cover member for covering the silicon charge
US-2023151510-A1 · May 18, 2023 · US
Use of arrays of quartz particles during single crystal silicon ingot production
US-2023142194-A1 · May 11, 2023 · US
Use of cover members when preparing a melt of silicon in a crucible assembly
US-2023145430-A1 · May 11, 2023 · US
Determination of mass/time ratios for buffer members used during growth of single crystal silicon ingots
US-2023142420-A1 · May 11, 2023 · US
Crucible for ingot grower
US-11608567-B2 · Mar 21, 2023 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/12?
- CPC C30B15/12 is the Cooperative Patent Classification code for “Double crucible methods.”
- How many patents are filed under CPC C30B15/12 (Double crucible methods)?
- Our database includes 83 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/12 growing?
- Publication counts under this code: 16 in 2024 vs 7 in 2025 (latest complete years).