Crystal growing systems and methods including a transparent crucible

Patent metadata

Field	Value
Publication number	US-10066314-B2
Application number	US-201615216351-A
Country	US
Kind code	B2
Filing date	Jul 21, 2016
Priority date	Jul 23, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.

First claim

What is claimed is:

1. A system for growing a crystal ingot from a melt, the system comprising:
a susceptor;
a crucible assembly supported by the susceptor and configured to contain the melt, the crucible assembly including a crucible, wherein the crucible is substantially transparent;
and a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation,
the susceptor enabling transfer of thermal energy to the melt via radiation through the transparent crucible wherein a percent of the total thermal radiation supplied to the susceptor and transferred through the crucible is between approximately 80% and approximately 92%, the crucible assembly includes a plurality of weirs, each weir being substantially transparent such that a percent of the total thermal radiation transferred through the plurality of weirs is between approximately 80% and approximately 92%.

2. The system of claim 1 , wherein the crucible remains transparent during the entire ingot growth cycle.

3. The system of claim 1 , wherein at least a portion of the crucible includes an anti-reflective coating configured to facilitate transmission of thermal radiation through the crucible.

4. The system of claim 1 , wherein a percent of the total thermal radiation supplied to the susceptor and transferred through the crucible is between approximately 90% and approximately 92%.

5. The system of claim 1 , wherein the susceptor includes graphite and the crucible includes quartz.

6. The system of claim 1 , wherein the crucible reaches a maximum operational temperature between approximately 1350 degrees Celsius (° C.) and approximately 1500° C.

7. The system of claim 6 , wherein the crucible reaches a maximum operational temperature between approximately 1450° C. and approximately 1475° C.

8. The system of claim 1 , wherein the crucible includes a base wall and a sidewall, wherein a thickness of the base wall and the sidewall is within a range of between approximately 10 millimeters (mm) and approximately 18 mm.

9. The system of claim 1 , wherein the thickness of the base wall and the sidewall is approximately 12 mm.

10. A crucible assembly for use in a system for growing a crystal ingot from a melt, the system includes a susceptor and a heating system, the crucible assembly comprising:
a crucible comprising a base wall and a sidewall, the crucible configured to contain the melt, wherein the crucible is substantially transparent, wherein the heating system generates thermal energy to supply to the susceptor via thermal radiation, the susceptor enabling transfer of thermal energy to the melt via radiation through the transparent crucible wherein a percent of the total thermal radiation supplied to the susceptor and transferred through the crucible is between approximately 80% and approximately 92%, the crucible assembly includes a plurality of weirs, each weir being substantially transparent such that a percent of the total thermal radiation transferred through the plurality of weirs is between approximately 80% and approximately 92%.

11. The crucible assembly of claim 10 , wherein the crucible remains transparent during the entire ingot growth cycle.

12. The crucible assembly of claim 10 , wherein at least a portion of the crucible includes an anti-reflective coating configured to facilitate transmission of thermal radiation through the crucible.

13. The crucible assembly of claim 10 , wherein a percent of the total thermal radiation supplied to the susceptor and transferred through the crucible is between approximately 90% and approximately 92%.

14. The crucible assembly of claim 10 , wherein the susceptor includes graphite and the crucible includes quartz.

15. The crucible assembly of claim 10 , wherein the crucible reaches a maximum operational temperature between approximately 1350 degrees Celsius (° C.) and approximately 1500° C.

16. The crucible assembly of claim 15 , wherein the crucible reaches a maximum operational temperature between approximately 1450° C. and approximately 1475° C.

17. The crucible assembly of claim 10 , wherein the base wall and the sidewall includes a thickness within a range of between approximately 10 millimeters (mm) and approximately 18 mm.

18. The crucible assembly of claim 17 , wherein the thickness of the base wall and the sidewall is approximately 12 mm.

Assignees

• Sunedison Semiconductor Ltd Uen201334164H
• Globalwafers Co Ltd

Inventors

• Phillips Richard J
• Basak Soubir
• Samanta Gaurab

Classifications

• C30B15/14 Primary

  Heating of the melt or the crystallised materials · CPC title

• C30B15/12

  Double crucible methods · CPC title

• C30B29/06

  Silicon · CPC title