Substrate treating apparatus and method of treating substrate

Patent metadata

Field	Value
Publication number	US-9852921-B2
Application number	US-201615175062-A
Country	US
Kind code	B2
Filing date	Jun 7, 2016
Priority date	Sep 2, 2015
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

First claim

What is claimed is:

1. A method of treating a substrate, the method comprising:
supplying a chemical solution to a substrate in a bath to perform a process on the substrate, the chemical solution having a first temperature and including a silicon compound and a phosphoric acid aqueous solution;
circulating the chemical solution;
sampling at least a portion of the circulated chemical solution;
measuring a water concentration and a silicon concentration of the sampled chemical solution having a second temperature lower than the first temperature; and
calculating a revised silicon concentration of the chemical solution in the bath at the first temperature based on the water concentration and the silicon concentration of the sampled chemical solution at the second temperature.

2. The method as claimed in claim 1 , wherein the revised silicon concentration is calculated according to a gradient of a variation in the measured silicon concentration to a variation in measured water concentration and excluding an interference according to a water variation in the bath.

3. The method as claimed in claim 2 , wherein an interlock signal is generated when the revised silicon concentration is beyond a predetermined setting range.

4. The method as claimed in claim 2 , wherein:
a first setting range of the measured silicon concentration is set,
a second setting range of the revised silicon concentration is set,
a first interlock signal is generated when the measured silicon concentration is beyond the first setting range, and
a second interlock signal is generated when the revised silicon concentration is beyond the second setting range.

5. The method as claimed in claim 1 ,
wherein the first temperature is 150° C. to 200° C., and
wherein the second temperature is 35° C. to 43° C.

6. A method of treating a substrate, the method comprising:
supplying a chemical solution to a substrate in a bath to perform a process on the substrate, the chemical solution having a first temperature including a silicon compound and a phosphoric acid aqueous solution;
circulating the chemical solution;
sampling at least a portion of the circulated chemical solution;
measuring a water concentration and a silicon concentration of the sampled chemical solution having a second temperature lower than the first temperature; and
calculating a revised silicon concentration of the chemical solution in the bath at the first temperature based on the water concentration and the silicon concentration of the sampled chemical solution at the second temperature,
wherein measuring the silicon concentration includes preventing a measurement error of the silicon concentration and preventing a silicon deposit, which occur by the silicon concentration increasing during the process.

7. The method as claimed in claim 6 , wherein measuring the silicon concentration includes:
supplying a reagent that dissolves silicon, and
measuring a potential difference of ions of silicon dissolved by the reagent.

8. The method as claimed in claim 7 , wherein preventing the measurement error of the silicon concentration includes periodically or non-periodically cleaning a silicon concentration measurer that measures the silicon concentration.

9. The method as claimed in claim 8 , wherein cleaning the silicon concentration measurer includes supplying the reagent to the silicon concentration measurer.

10. The method as claimed in claim 9 , further comprising exhausting the chemical solution after measuring the water concentration and the silicon concentration,
wherein the chemical solution used to measure the water concentration is exhausted independently of a mixed solution of the reagent and the chemical solution used to measure the silicon concentration.

11. The method as claimed in claim 10 , wherein:
the mixed solution is heated to a predetermined temperature to additionally dissolve silicon,
the mixed solution is mixed with the chemical solution used to measure the water concentration after heating the mixed solution, and
the mixed solutions are exhausted.

12. The method as claimed in claim 6 , wherein the chemical solution includes the silicon compound in a concentration of about 80 ppm to about 1,000 ppm.

13. A method of treating a substrate, the method comprising:
supplying a chemical solution to a substrate in a bath to perform a process on the substrate, the chemical solution having a first temperature and including a silicon compound and a phosphoric acid aqueous solution;
circulating the chemical solution;
sampling at least a portion of the circulated chemical solution;
measuring a water concentration and a silicon concentration of the sampled chemical solution having a second temperature lower than the first temperature; and
calculating a revised silicon concentration of the chemical solution in the bath at the first temperature based on the water concentration and the silicon concentration of the sampled chemical solution at the second temperature,
wherein:
performing the process on the substrate increases the silicon concentration of the chemical solution, and
measuring the silicon concentration includes cleaning a silicon concentration measurer that measures the silicon concentration.

14. The method as claimed in claim 13 , wherein the revised silicon concentration is calculated according to a gradient of a variation in the measured silicon concentration to a variation in measured water concentration and excluding an interference according to a water variation in the bath.

15. The method as claimed in claim 14 , wherein an interlock signal is generated when the revised silicon concentration is beyond a predetermined setting range.

16. The method as claimed in claim 14 , wherein:
a first setting range of the measured silicon concentration is set,
a second setting range of the revised silicon concentration is set,
a first interlock signal is generated when the measured silicon concentration is beyond the first setting range, and
a second interlock signal is generated when the revised silicon concentration is beyond the second setting range.

17. The method as claimed in claim 1 ,
wherein the first temperature is 150° C. to 200° C., and
wherein the second temperature is 35° C. to 43° C.

18. The method as claimed in claim 13 , wherein measuring the silicon concentration further includes:
supplying a reagent that dissolves silicon, and
measuring a potential difference of ions of silicon dissolved by the reagent.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Kyoung Hwan
• Kim Ingi
• Park Mihyun
• Kim Young-Hoo
• PARK Ui-soon
• Oh Jung-Min
• Lee Kuntack
• Lee Hyosan

Classifications

• H10P72/0616

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H01L21/67253

  Electricity · mapped topic