Optical proximity correction for directed-self-assembly guiding patterns

Patent metadata

Field	Value
Publication number	US-9836556-B2
Application number	US-201615085096-A
Country	US
Kind code	B2
Filing date	Mar 30, 2016
Priority date	Mar 30, 2015
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

Aspects of the disclosed technology relate to techniques of optical proximity correction for directed self-assembly guiding patterns. An initial mask pattern for photomask fabrication is first generated by performing a plurality of conventional optical proximity correction iterations. Predicted print errors for two or more via-type features are then determined based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features. Here the predicted guiding pattern is derived based on the initial mask pattern. Based on the predicted print errors and the correlation information, the initial mask pattern is adjusted to generate a new mask pattern.

First claim

What is claimed is:

1. One or more non-transitory computer-readable media storing computer-executable instructions for causing one or more processors to perform a method, the method comprising:
determining predicted print errors for two or more via-type features based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features, wherein the predicted guiding pattern is derived based on an initial mask pattern for photomask fabrication and the correlation information comprises a template error enhancement factor (TEEF); and
adjusting the initial mask pattern to generate a new mask pattern based on the predicted print errors for the two or more via-type features and the correlation information.

2. The one or more non-transitory computer-readable media recited in claim 1 , wherein the method further comprises:
repeating the determining and the adjusting by replacing the initial mask pattern with the new mask pattern until one of one or more termination conditions is met.

3. The one or more non-transitory computer-readable media recited in claim 1 , wherein the initial mask pattern is generated by performing a plurality of conventional optical proximity correction iterations.

4. The one or more non-transitory computer-readable media recited in claim 1 , wherein the guiding pattern parameters comprise longest length along line connecting the two via-type features, widest width, distance between two inflection points on two inner edges of a neck region and neck width in the middle of the initial guiding pattern.

5. The one or more non-transitory computer-readable media recited in claim 4 , wherein the guiding pattern parameters further comprise curvatures around corners and slopes at inflection points.

6. The one or more non-transitory computer-readable media recited in claim 1 , wherein the correlation information is derived based on simulation or empirical data.

7. The one or more non-transitory computer-readable media recited in claim 6 , wherein the simulation is Monte Carlo simulation.

8. A method, executed by at least one processor of a computer, comprising:
determining predicted print errors for two or more via-type features based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features, wherein the predicted guiding pattern is derived based on an initial mask pattern for photomask fabrication and the correlation information comprises a template error enhancement factor (TEEF); and
adjusting the initial mask pattern to generate a new mask pattern based on the predicted print errors for the two or more via-type features and the correlation information.

9. The method recited in claim 8 , further comprising:
repeating the determining and the adjusting by replacing the initial mask pattern with the new mask pattern until one of one or more termination conditions is met.

10. The method recited in claim 8 , wherein the initial mask pattern is generated by performing a plurality of conventional optical proximity correction iterations.

11. The method recited in claim 8 , wherein the guiding pattern parameters comprise longest length along line connecting the two via-type features, widest width, distance between two inflection points on two inner edges of a neck region and neck width in the middle of the initial guiding pattern.

12. The method recited in claim 11 , wherein the guiding pattern parameters further comprise curvatures around corners and slopes at inflection points.

13. The method recited in claim 8 , wherein the correlation information is derived based on simulation or empirical data.

14. The method recited in claim 13 , wherein the simulation is Monte Carlo simulation.

15. A system comprising:
one or more processors, the one or more processors programmed to perform a method, the method comprising:
determining predicted print errors for two or more via-type features based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features, wherein the predicted guiding pattern is derived based on an initial mask pattern for photomask fabrication and the correlation information comprises a template error enhancement factor (TEEF); and
adjusting the initial mask pattern to generate a new mask pattern based on the predicted print errors for the two or more via-type features and the correlation information.

16. The system recited in claim 15 , wherein the initial mask pattern is generated by performing a plurality of conventional optical proximity correction iterations.

Assignees

• Mentor Graphics Corp

Inventors

• Lei Junjiang
• Hong Le
• Ma Yuansheng

Classifications

• G03F1/36

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F1/00

  Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title