Methodology to generate a guiding template for directed self-assembly

Patent metadata

Field	Value
Publication number	US-2016266486-A1
Application number	US-201415034810-A
Country	US
Kind code	A1
Filing date	Oct 10, 2014
Priority date	Nov 8, 2013
Publication date	Sep 15, 2016
Grant date	—

Abstract

A method of designing a feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography, the feature guiding template including at least two portions joined by a bottleneck, the method including determining a characteristic of the feature guiding template based on at least a function of geometry of the feature guiding template including a value of a first width of at least one of the portions, a value of a second width of the bottleneck, or a value based on both the first width and the second width.

First claim

1 . A method of designing a feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography, the feature guiding template comprising at least two portions joined by a bottleneck, the method comprising:
determining a characteristic of the feature guiding template based on at least a function of geometry of the feature guiding template, the function comprising a value of a width of the bottleneck, or a value based on, or comprising, both a width of at least one of the portions and the width of the bottleneck.

2 . A method of determining a characteristic of a feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography, the method comprising:
determining a guiding template for each of the at least two features without accounting for the other of the at least two features; and determining a characteristic of the feature guiding template based on at least a function of geometry of the feature guiding template, the feature guiding template being the joining of each of the guiding templates for the two or more features.

3 . The method of claim 1 , wherein the characteristic comprises one or more selected from: height, shape, feature spacing, material, side wall angle and/or surface chemistry.

4 . The method of claim 1 , wherein the at least two features comprise one or more features-selected from: a contact hole, an isolation trench, a via, a lead, a mask cut line, and/or a gate electrode.

5 . The method of claim 1 , wherein determining the characteristic is further based on one or more selected from: placement error of at least one of the features, chemical composition of at least one polymer of the block copolymer, structure of the block copolymer, thickness of the block copolymer, annealing temperature of the block copolymer, annealing rate of the block copolymer, and/or a solvent for the block copolymer.

6 . The method of claim 2 , wherein the feature guiding template comprises at least two portions joined by a bottleneck.

7 . The method of claim 2 , wherein the function of geometry comprises a width of at least one of the portions and/or a width of the bottleneck.

8 . The method of claim 1 , wherein the function of geometry comprises a ratio between the width of at least one of the portions and the width of the bottleneck.

9 . The method of claim 8 , wherein the ratio is a ratio of the width of the bottleneck to the width of at least one of the portions.

10 . The method of claim 9 , wherein the ratio is not greater than 0.5.

11 . The method of claim 9 , wherein the ratio is not smaller than 0.3.

12 . A method, comprising designing a geometric characteristic of a feature guiding template based on at least a function of geometry of the feature guiding template, the feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography and comprising at least two portions joined by a bottleneck.

13 . The method of claim 12 , wherein the characteristic comprises one or more selected from: height, shape, sidewall angle and/or feature spacing.

14 . The method of claim 12 , wherein the at least two features comprise one or more features selected from: a contact hole, an isolation trench, a via, a lead, a mask cut line and/or a gate electrode.

15 . The method of claim 12 , wherein designing the characteristic is further based on one or more selected from: placement error of at least one of the features, chemical composition of at least one polymer of the block copolymer, structure of the block copolymer, thickness of the block copolymer, annealing temperature of the block copolymer, annealing rate of the block copolymer, and/or a solvent for the block copolymer.

16 . The method of claim 12 , wherein the function of geometry comprises a width of at least one of the portions and/or a width of the bottleneck.

17 . The method of claim 12 , wherein the function of geometry comprises a value of a width of the bottleneck or a value based on, or comprising, both a width of at least one of the portions and the width of the bottleneck.

18 . The method of claim 17 , wherein the value is a ratio between the width of at least one of the portions and the width of the bottleneck.

19 . The method of claim 18 , wherein the ratio is a ratio of the width of the bottleneck to the width of at least one of the portions.

20 . The method of claim 19 , wherein the ratio is not greater than 0.5.

21 . The method of claim 19 , wherein the ratio is not smaller than 0.3.

22 . The method of claim 19 , wherein the ratio is selected from 0.48 to 0.52.

23 .- 37 . (canceled)

Assignees

• Asml Netherlands Bv
• Asml Netherland Bv

Inventors

• Wuister Sander Frederik
• Ambesi Davide

Classifications

• G06F30/39

  Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) · CPC title

• G06F2119/18

  Manufacturability analysis or optimisation for manufacturability · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G06F17/5068

  Physics · mapped topic