CD-SEM technique for wafers fabrication control

Patent metadata

Field	Value
Publication number	US-9824852-B2
Application number	US-201514985847-A
Country	US
Kind code	B2
Filing date	Dec 31, 2015
Priority date	Dec 31, 2015
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.

First claim

We claim:

1. A method for detecting material properties and/or defects of semiconductor wafers, the method comprising:
concurrently performing operations to obtain Critical Dimensions Scanning Electron Microscope (CD-SEM) measurements of a semiconductor wafer and an analysis of a Grey Level image of the semiconductor wafer, by a material-sensitive and High Aspect Ratio (HAR)-sensitive imaging technology; and
processing together results of the CD-SEM measurements of the semiconductor wafer and the analysis of the Grey Level image of the wafer obtained by the material-sensitive and HAR-sensitive imaging technology.

2. The method of claim 1 , further comprising:
automatically inspecting the semiconductor wafer by:
performing Back Scattering Electron (BSE) imaging to obtain the Grey Level (GL) image of the semiconductor wafer;
performing an analysis of the obtained GL image concurrently with the CD-SEM measurements of the semiconductor wafer; and
processing results of the CD-SEM measurements together with results of the GL image analysis to determine material properties and/or defects of the semiconductor wafer.

3. The method of claim 2 , wherein the CD-SEM measurements are further obtained by using the Grey Level image created by the BSE imaging.

4. The method of claim 2 , further comprising:
detecting defectivity of a fabrication process of the semiconductor wafer based on the material properties and/or defects determined for the semiconductor wafer to enable control of the fabrication process.

5. The method of claim 2 , wherein performing the GL image analysis comprises:
determining one or more of the following parameters of a feature or group of features fabricated on the semiconductor wafer: Uniformity, Contrast, or Statistical characteristics of Quality Grades of contours of the feature.

6. The method of claim 5 , wherein performing the GL image analysis comprises:
determining of uniformity of a specific feature by using Gray Level Uniformity (GLU) analysis by estimation of Grey Level distribution on an area of the specific feature.

7. The method of claim 5 , further comprising:
determining contrast of the feature by comparing Gray Level statistical metrics corresponding to an average of a Grey Level in a region of the GL image and a standard deviation of the Grey Level in the region of the GL Image that are obtained upon the BSE imaging with CD-SEM measurements based on a number of similar features.

8. The method of claim 5 , further comprising:
determining a presence or an absence of a particular feature on the semiconductor wafer by Fit Quality analysis of feature contours location based on Gray Level image statistics and primary knowledge.

9. The method of claim 2 , wherein the GL image analysis includes one or more of the following:
GL uniformity analysis to detect defects inside features;
GL analysis of relative contrast of layers to detect material property of layers; or
Fit-Quality analysis of the GL image based on GL statistics to detect missing features by analyzing feature contours location and primary knowledge.

10. The method of claim 2 , wherein the GL image analysis is performed upon Inverse Transformation per pixel of the Grey Level image by recovering original data on BSE signals previously transformed to produce the Grey-Level image.

11. The method of claim 10 , further comprising:
executing the Inverse Transformation of the Grey Level image per pixel by Grey-Level Stretching Compensation while the Inverse Transformation comprised Grey-Level image stretching.

12. The method of claim 10 , further comprising:
obtaining one or more Grey Level threshold values by using the recovered original data on physical signals; and
utilizing the one or more Grey Level threshold values to determine defects.

13. The method of claim 1 , wherein the semiconductor wafer is manufactured according to one or more of technologies characterized by High Aspect Ratio (HAR), the one or more technologies comprising Via in Trench (VIT), Dynamic Random Access Memory (DRAM), or Vertical Negative-AND (VNAND).

14. A Critical Dimensions Scanning Electron Microscope (CD-SEM) comprising:
a unit to obtain CD-SEM measurements of a semiconductor wafer;
a Back Scattering Electron (BSE) imaging unit to obtain a Grey Level (GL) image of the semiconductor wafer;
a unit to perform GL analysis of the GL image and to process the GL analysis results with reference to results of the CD-SEM measurements; and
a unit to perform a defect analysis of the semiconductor wafer based on the GL analysis of the GL image and the CD-SEM measurements.

15. The CD-SEM according to claim 14 , further comprising:
a block to provide primary knowledge on a location of a feature on the semiconductor wafer.

16. The CD-SEM according to claim 14 , further comprising:
BSE detectors to collect BSE data for the BSE imaging unit.

17. The CD-SEM according to claim 14 , wherein the unit to perform the GL analysis is further to perform Inverse Transformation of the GL image to restore original BSE data on physical signals.

18. The CD-SEM according to claim 17 , wherein the unit to perform the GL analysis is to respectively perform measurements of Uniformity, Contrast, and Contours of a feature or group of features fabricated on the semiconductor wafer based on the restored original BSE data.

19. The CD-SEM according to claim 17 , further comprising:
a unit to detect material properties and defects of the semiconductor wafer based on one or more measurements of Uniformity, Contrast, and Contours of a feature or group of features.

20. A non-transitory computer readable storage medium comprising data that, when accessed by a processing device, cause the processing device to perform operations comprising:
concurrently performing operations to obtain Critical Dimensions Scanning Electron Microscope (CD-SEM) measurements of a semiconductor wafer and an analysis of a Grey Level image of the semiconductor wafer by a material-sensitive and High Aspect Ratio (HAR) sensitive imaging technology; and
processing together results of the CD-SEM measurements of the semiconductor wafer and the analysis of the Grey Level image of the wafer obtained by the material-sensitive and HAR-sensitive imaging technology.

Assignees

• Applied Materials Israel Ltd
• Applied Materials Israel Ltd

Inventors

• Kris Roman
• Weinberg Yakov
• Ivanchenko Yan
• Schwarzband Ishai
• Lange Dan
• ENGLANDER Arbel
• NOIFELD Efrat
• Goldman Ran
• Shoval Ori

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N2223/6116

  semiconductor wafer · CPC title

• H01J2237/2813

  characterised by the application · CPC title

• G01N2223/646

  flaws, defects · CPC title

• G06T2207/10061

  from scanning electron microscope · CPC title