Method for producing graphene

Patent metadata

Field	Value
Publication number	US-9822009-B2
Application number	US-201514947659-A
Country	US
Kind code	B2
Filing date	Nov 20, 2015
Priority date	May 29, 2013
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C 2 H 4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C 2 H 2 gas as a high reactivity carbon-containing gas by heat in the space.

First claim

What is claimed is:

1. A graphene producing method, comprising:
activating a catalytic metal layer formed on a substrate;
supplying and decomposing a low reactivity carbon-containing gas in a space that faces the substrate; and
supplying and decomposing a high reactivity carbon-containing gas different from the low reactivity carbon-containing gas, after supplying and decomposing the low reactivity carbon containing gas, in the space that faces the substrate,
wherein the low reactivity carbon-containing gas includes at least one of an ethylene gas (a C2H4 gas), a methane gas, an ethane gas, or a propane gas, a propylene gas, a cyclic hydrocarbon gas, an aromatic hydrocarbon gas, a phenol, an alcohol, and ether, and
wherein the high reactivity carbon-containing gas includes at least an acetylene gas (a C 2 H 2 gas).

2. The method of claim 1 , wherein, in supplying and decomposing the low reactivity carbon-containing gas, the low reactivity carbon-containing gas is decomposed by plasma.

3. The method of claim 1 , wherein, in supplying and decomposing the high reactivity carbon-containing gas, the high reactivity carbon-containing gas is decomposed by heat.

4. The method of claim 1 , wherein the temperature of the substrate is between 300 degrees C. and 500 degrees C. in supplying and decomposing the low reactivity carbon-containing gas and in supplying and decomposing the high reactivity carbon-containing gas.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagaya Munehito
• Matsumoto Takashi
• Nishide Daisuke

Classifications

• C23C16/45574

  Nozzles for more than one gas · CPC title

• C01B31/0453 Primary

  Chemistry & Metallurgy · mapped topic

• C01B2204/32

  Size or surface area · CPC title

• C23C16/452

  by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title

• C01B32/186 Primary

  by chemical vapour deposition [CVD] · CPC title