Method of manufacturing graphene substrate, and graphene substrate
US-8980217-B2 · Mar 17, 2015 · US
Method for the controlled growth of a graphene film
US9206509B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9206509-B2 |
| Application number | US-200913124413-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 16, 2009 |
| Priority date | Oct 17, 2008 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
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Abstract
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The invention includes a controlled graphene film growth process including the production on the surface of a substrate of a layer of a metal having with carbon a phase diagram such that, above a molar concentration threshold ratio C M /C M +C C , where C M is the molar metal concentration in a metal/carbon mixture and C C is the molar carbon concentration in the mixture, a homogeneous solid solution is obtained. The metal layer is exposed to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio to obtain a solid solution of carbon in the metal. The process further includes an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase, leading to the formation of at least a lower graphene film at the metal layer incorporating carbon atoms-substrate interface and an upper graphene film at the surface of the metal layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A controlled graphene film growth process comprising: depositing a layer of metal on a surface of a substrate, wherein the metal of the metal layer is selected in response to the solubility of carbon in the metal; exposing the layer of metal to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a first temperature disposed along a phase diagram of the metal in order to raise the concentration of carbon in t…
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C16/26Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9206509B2 cover?
- The invention includes a controlled graphene film growth process including the production on the surface of a substrate of a layer of a metal having with carbon a phase diagram such that, above a molar concentration threshold ratio C M /C M +C C , where C M is the molar metal concentration in a metal/carbon mixture and C C is the molar carbon concentration in the mixture, a homogeneous solid …
- Who is the assignee on this patent?
- Baraton Laurent, Cojocaru Costel Sorin, Pribat Didier, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/26. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).