Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US2015299894A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015299894-A1 |
| Application number | US-201314646384-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 4, 2013 |
| Priority date | Dec 13, 2012 |
| Publication date | Oct 22, 2015 |
| Grant date | — |
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A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz. The method for obtain such a material involves a multi-stage annealing process.
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1 . A synthetic diamond material comprising one or more spin defects having a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 100 MHz, wherein the full width half maximum intrinsic inhomogeneous zero phonon line width is averaged over one or both of: at least 10 seconds; and at least 10 spectral scans, wherein the synthetic diamond material is CVD synthetic diamond material, and wherein the one or more spin defects are NV − spin defects.…
Chemistry & Metallurgy · mapped topic
Physics · mapped topic
Chemistry & Metallurgy · mapped topic
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Chemistry & Metallurgy · mapped topic
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