Apparatus of plural charged-particle beams

US10109456B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10109456-B2
Application numberUS-201715633639-A
CountryUS
Kind codeB2
Filing dateJun 26, 2017
Priority dateMar 10, 2015
Publication dateOct 23, 2018
Grant dateOct 23, 2018

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Abstract

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A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

First claim

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What is claimed is: 1. A source-conversion unit, comprising: an image-forming element including: a first layer with a first set of multi-pole structures, and a second layer with a second set of multi-pole structures respectively corresponding to the first set of multi-pole structures, wherein multi-pole structures of the first set of multi-pole structures are aligned with the respective multi-pole structures of the second set of multi-pole structures to form a plurality of pairs of multi-pole structures, wherein a pair of multi-pole structures functions as at least a micro-deflector to deflect a beamlet of a charged particle beam generated by a charged particle source to form a virtual image of the charged particle source. 2. The source-conversion unit of claim 1 , wherein the pair of multi-pole structures functions as the micro-deflector, and at least one of a micro-lens to focus the beamlet to a desired degree and a micro-stigmator to add a desired amount of astigmatism aberration to the beamlet. 3. The source-conversion unit of claim 1 , further comprising: a beamlet-limit element disposed below the image-forming element and including a plurality of beam-limit openings respectively corresponding to the plurality of pairs of multi-pole structures to limit a plurality of beamlets deflected by the plurality of pairs of multi-pole structures. 4. The source-conversion unit of claim 3 , wherein each one of the plurality of beam-limit openings is aligned with a corresponding pair of the plurality of pairs of multi-pole structures. 5. The source-conversion unit of claim 1 , wherein the first layer is an upper layer, and the second layer is a lower layer disposed below the first layer. 6. The source-conversion unit of claim 1 , wherein each multi-pole structure of the first set of multi-pole structures and the second set of multi-pole structures is a 4-pole structure. 7. The source-conversion unit of claim 6 , wherein in each pair of multi-pole structures, a multi-pole structure of the first layer and a multi-pole structure of the second layer have a 45° difference in azimuth. 8. The source-conversion unit of claim 1 , further comprising: a first electric conduction plate with a plurality of through-holes, each through-hole is aligned with a corresponding pair of the plurality of pairs of multi-pole structures. 9. The source-conversion unit of claim 8 , wherein the first electric conduction plate is disposed below the plurality of pairs of multi-pole structures. 10. The source-conversion unit of claim 8 , wherein the first electric conduction plate is disposed above the plurality of pairs of multi-pole structures. 11. The source-conversion unit of claim 10 , further comprising: a second electric conduction plate disposed below the plurality of pairs of multi-pole structures. 12. The source-conversion unit of claim 1 , wherein the charged particle source is an electron source, and the charged particle beam is an electron beam. 13. A multi-beam apparatus, comprising the source-conversion unit of claim 1 . 14. A method to configure a source-conversion unit, comprises: providing an image-forming element including: a first layer with a first set of multi-pole structures; and a second layer with a second set of multi-pole structures respectively corresponding to the first set of multi-pole structures, wherein multi-pole structures of the first set of multi-pole structures are aligned with the respective multiple-pole structures of the second set of multi-pole structures to form a plurality of pairs of multi-pole structures, wherein a pair of multi-pole structures functions as a micro-deflector to deflect a beamlet of a charged particle beam generated by a charged particle source to form a virtual image of the charged particle source. 15. The method of claim 14 , wherein the pair of multi-pole structures functions as the micro-deflector, and at least one of a micro-lens to focus the beamlet to a desired degree and a micro-stigmator to add a desired amount of astigmatism aberration to the beamlet. 16. The method of claim 14 , further comprising: providing a beamlet-limit element disposed below the image-forming element and including a plurality of beam-limit openings respectively corresponding to the plurality of pairs of multi-pole structures to limit a plurality of beamlets deflected by the plurality of pairs of multi-pole structures. 17. The method of claim 16 wherein each one of the plurality of beam-limit openings is aligned with a corresponding pair of the plurality of pairs of multi-pole structures. 18. The method of claim 14 , wherein the first layer is an upper layer, and the second layer is a lower layer disposed below the first layer. 19. The method of claim 14 , wherein each multi-pole structure of the first set of multi-pole structures and the second set of multi-pole structures is a 4-pole structure. 20. The method of claim 19 , wherein in each pair of multi-pole structures, a multi-pole structure of the first layer and a multi-pole structure of the second layer have a 45° difference in azimuth. 21. The method of claim 14 , further comprising: providing a first electric conduction plate with a plurality of through-holes, each through-hole is aligned with a corresponding pair of the plurality of pairs of multi-pole structures. 22. The method of claim 21 , wherein the first electric conduction plate is disposed below the plurality of pairs of multi-pole structures. 23. The method of claim 21 , wherein the first electric conduction plate is disposed above the plurality of pairs of multi-pole structures. 24. The method of claim 23 , further comprising: providing a second electric conduction plate disposed below the plurality of pairs of multi-pole structures. 25. The method of claim 24 , wherein the charged particle source is an electron source, and the charged particle beam is an electron beam. 26. A source-conversion unit, comprising: an image-forming element including: a first layer with a first set of multi-pole structures, and a second layer with a second set of multi-pole structures, wherein the first set of multi-pole structures are aligned with the second set of multi-pole structures to function as at least one of a micro-deflector to deflect a beamlet of charged particles, a micro-lens to focus the beamlet, and a micro-stigmator to add a desired amount of astigmatism aberration to the beamlet.

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What does patent US10109456B2 cover?
A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conver…
Who is the assignee on this patent?
Hermes Microvision Inc, Hermes Microvision Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/28. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 23 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).