Device manufacturing apparatus and manufacturing method of magnetic device using structure to pass ion beam

Patent metadata

Field	Value
Publication number	US-9799482-B2
Application number	US-201615067832-A
Country	US
Kind code	B2
Filing date	Mar 11, 2016
Priority date	Jan 31, 2014
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.

First claim

What is claimed is:

1. A device manufacturing apparatus comprising:
a substrate holding portion holding a substrate to be processed;
an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and
at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes,
wherein
the first structure includes a conductor, and
an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.

2. The apparatus of claim 1 , wherein
the first structure is disposed on a side of the substrate holding portion from an intermediate position between the ion source and the substrate holding portion.

3. The apparatus of claim 1 , wherein
the housing has a cylindrical structure,
the ion source further includes a magnetic field source installed on a center axis of the housing to generate a first magnetic field,
the first magnetic field includes a first magnetic field component in a first direction along an emission direction of the ion beam and a second magnetic field component in a second direction perpendicular to the emission direction of the ion beam,
the first magnetic field component on the center axis of the housing has a magnetic field strength stronger at a center of the housing than at the first opening, and
the second magnetic field component in the first opening has a magnetic field strength weaker at the center of the first opening than at an end of the first opening.

4. The apparatus of claim 1 , wherein
the first structure has a first protruding portion disposed along an edge of the first through hole and protruding toward a side of the ion source, and
an opening dimension of the first protruding portion on the side of the ion source is smaller than an opening dimension of the first protruding portion on a side of the substrate holding portion.

5. The apparatus of claim 1 , wherein
the first structure has a second protruding portion disposed along an edge of the first through hole and protruding toward a side of the substrate holding portion, and
an opening dimension of the second protruding portion on the side of the substrate holding portion is larger than an opening dimension of the second protruding portion on a side of the ion source.

6. The apparatus of claim 1 , further comprising:
a second structure disposed between the first structure and the substrate holding portion and having a second through hole through which the ion beam passes, wherein
the second structure has a third protruding portion disposed along an edge of the second through hole and protruding toward a side of the substrate holding portion, and
an opening dimension of the third protruding portion on the side of the substrate holding portion is larger than an opening dimension of the third protruding portion on a side of the ion source.

7. The apparatus of claim 1 , wherein
the first structure includes a first portion on an edge of the first through hole and a second portion on the edge of the first through hole, the second portion is opposed to the first portion,
a first interval between the first portion and a center of the substrate holding portion in a direction perpendicular to a surface of the substrate holding portion is smaller than a second interval between the second portion and the center of the substrate holding portion in the direction perpendicular to the surface of the substrate holding portion, and
the ion source is set to irradiate with the ion beam in a slanting direction with respect to the surface of the substrate holding portion and from the side of the first portion.

8. The apparatus of claim 1 , wherein
a surface of the first structure and a surface of the substrate holding portion are opposed to each other, and
the substrate holding portion moves the substrate in a direction parallel to the surface of the first structure.

9. The apparatus of claim 1 , wherein
the substrate is irradiated with the ion beam in a state in which the substrate holding portion covers 70% or more of an area of the first through hole when viewed from a side of the ion source.

10. The apparatus of claim 1 , wherein
the substrate is irradiated with the ion beam in a state in which the substrate holding portion covers 100% of an area of the first through hole when viewed from a side of the ion source.

11. A manufacturing method of a magnetic device comprising:
generating the ion beam by the device manufacturing apparatus of claim 1 ; and
forming at least one magnetoresistive effect element by processing the substrate by the ion beam passing through the first through hole, the substrate comprising the layer to be processed including a laminated structure, the laminated structure including at least a first magnetic layer in which an orientation of magnetization is variable, a second magnetic layer in which the orientation of the magnetization is invariable, and a nonmagnetic layer between the first and second magnetic layers.

12. The method of claim 11 , wherein
the layer is processed by the ion beam such that a maximum dimension of the first magnetic layer of the magnetoresistive effect element in the direction parallel to a surface of the substrate is 25 nm or less.

13. A device manufacturing apparatus comprising:
a substrate holding portion holding a substrate to be processed;
a first ion source including a first housing, a first anode disposed inside the first housing, a first cathode disposed outside the first housing, and a first opening disposed in a portion of the first housing such that the first anode is exposed to a region between the first anode and the substrate holding portion, the first ion source configured to generate a first ion beam with which the substrate is irradiated;
a second ion source including a second housing, a second anode disposed inside the second housing, a second cathode disposed outside the second housing, and a second opening disposed in a portion of the second housing such that the second anode is exposed to a region between the second anode and the substrate holding portion, the second ion source configured to generate a second ion beam with which the substrate is irradiated; and
a first structure disposed between the first and second ion sources and the substrate holding portion, and having at least one through hole through which the first and second ion beams pass,
wherein
the first structure includes a conductor,
opening dimension of the at least one through hole are equal to or larger than the opening dimensions of the first and second openings,
the first ion source is set to irradiate with the first ion beam from a first direction with respect to a surface of the substrate holding portion, and
the second ion source is set to irradiate with the second ion beam from a second direction with respect to the surface of the substrate holding portion, the second direction is different from the first direction.

14. The apparatus of claim 13 , wherein
the at least one through hole comprises first and second through holes which are different from each other, the first ion beam passing through the first through hole, the second ion beam passing through the second through hole.

15. The apparatus of claim 13 , wherein
the first and second ion

Assignees

• Toshiba Memory Corp

Inventors

• Ohsawa Yuichi
• Ui Akio
• Ito Junichi
• Kamata Chikayoshi
• Yakabe Megumi
• Kashiwada Saori

Classifications

• H01J37/3053

  for evaporating or etching · CPC title

• H01J37/09

  Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields · CPC title

• H01J37/20

  Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support · CPC title

• H01J2237/3151

  Etching · CPC title

• H01J2237/0822

  Multiple sources · CPC title