Substrate with high fracture strength

Patent metadata

Field	Value
Publication number	US-9797069-B2
Application number	US-53420309-A
Country	US
Kind code	B2
Filing date	Aug 3, 2009
Priority date	Aug 6, 2008
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

The invention discloses a substrate with high fracture strength. The substrate according to the invention includes a plurality of nanostructures. The substrate has a first surface, and the nanostructures are protruded from the first surface. By the formation of the nanostructures, the fracture strength of the substrate is enhanced.

First claim

What is claimed is:

1. A substrate with high fracture strength comprising:
a substrate body;
the substrate body comprising a first surface and a second surface;
the second surface being opposite to the first surface;
a plurality of first nanostructures;
the plurality of first nano structures protruding from the first surface of the substrate body, such that a fracture strength of the substrate is increased in comparison with another substrate without another nanostructure formed thereon;
each of the plurality of first nanostructures being one piece formed with the first surface of the substrate body;
each of the plurality of first nanostructures substantially forming a first nanorod with a first flat top;
a first width of each of the plurality of first nanostructures being decreased from the first surface of the substrate body respectively;
a first aspect ratio R1;
the first aspect ratio R1 being defined by a formula of R1=B1/A1, where A1 is a gap width between any two adjacent first flat tops of the plurality of first nanostructures, B1 is a height of each of the plurality of first nanostructures;
the first aspect ratio R1 being larger than 3.0 and less than 4.0;
a plurality of second nanostructures;
the plurality of second nanostructures protruding from the second surface of the substrate body, such that the fracture strength of the substrate is further increased in comparison with the another substrate without the another nanostructure formed thereon;
each of the plurality of second nanostructures being one piece formed with the second surface of the substrate body;
each of the plurality of second nanostructures substantially forming a second nanorod with a second flat top;
a second width of each of the plurality of second nanostructures being decreased from the second surface of the substrate body respectively;
a second aspect ratio R2;
the second aspect ratio R2 being defined by a formula of R2=B2/A2, where A2 is a gap width between any two adjacent second flat tops of the plurality of second nanostructures, B2 is a height of each of the plurality of second nanostructures; and
the second aspect ratio R2 being greater than 3.0 and less than 4.0.

2. The substrate of claim 1 , wherein the substrate body is a monocrystalline substrate.

3. The substrate of claim 1 , wherein the height of each first nanostructure is in the micrometer scale.

4. The substrate of claim 1 , wherein the plurality of first nanostructures are formed by an electrochemical etching process.

5. The substrate of claim 1 , wherein the first surface is a tension bearing surface of the substrate.

6. The substrate of claim 1 , wherein the height of each second nanostructure is in the micrometer scale.

7. The substrate of claim 2 , wherein the substrate body is a monocrystalline silicon substrate.

8. The substrate of claim 7 , wherein a crystal orientation of the first surface of the monocrystalline silicon substrate is [100] or [111].

9. The substrate of claim 1 , wherein the substrate body is a polycrystalline substrate.

Assignees

• Yeh Jer-Liang Andrew
• Nat Univ Tsing Hua

Inventors

• Yeh Jer-Liang Andrew

Classifications

• C30B33/10 Primary

  in solutions or melts · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L29/34

  Electricity · mapped topic

• Y10T428/24355

  Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] · CPC title

• H01L29/0665

  Electricity · mapped topic