Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2017115239-A1
Application number	US-201715398451-A
Country	US
Kind code	A1
Filing date	Jan 4, 2017
Priority date	Jun 23, 2005
Publication date	Apr 27, 2017
Grant date	—

Abstract

A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d 1 −d 2 |/d 2 obtained from the plane spacing d 1 at the X-ray penetration depth of 0.3 μm and the plane spacing d 2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10 −3 . The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

First claim

1 - 14 . (canceled)

15 . An epilayer-containing nitride crystal substrate comprising:
one or more semiconductor layer(s) formed by epitaxial growth on at least one of main surface sides of a nitride crystal substrate formed of a nitride crystal, wherein, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of said crystal while X-ray diffraction conditions of said specific parallel crystal lattice planes being satisfied, a uniform distortion at a surface layer of said crystal represented by a value of |d 1 −d 2 |/d 2 obtained from said plane spacing d 1 at said X-ray penetration depth of 0.3 mm and said plane spacing d 2 at the X-ray penetration depth of 5 mm is equal to or lower than 2.1×10 −3 .

16 . An epilayer-containing nitride crystal substrate comprising:
one or more semiconductor layer(s) formed by epitaxial growth on at least one of main surface sides of a nitride crystal substrate formed of a nitride crystal, wherein, on a diffraction intensity profile of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of said crystal while X-ray diffraction conditions of said specific parallel crystal lattice planes being satisfied, an irregular distortion at a surface layer of said crystal represented by a value of |v 1 −v 2 | obtained from a half value width v 1 of a diffraction intensity peak at said X-ray penetration depth of 0.3 mm and a half value width v 2 of the diffraction intensity peak at said X-ray penetration depth of 5 mm is equal to or lower than 150 arcsec.

17 . An epilayer-containing nitride crystal substrate comprising:
one or more semiconductor layer(s) formed by epitaxial growth on at least one of main surface sides of a nitride crystal substrate formed of a nitride crystal, wherein, on a rocking curve measured by varying an X-ray penetration depth from a surface of the nitride crystal in connection with X-ray diffraction of arbitrary specific parallel crystal lattice planes of said crystal, a plane orientation deviation of said specific parallel crystal lattice planes represented by a value of |w 1 −w 2 | obtained from a half value width w 1 of a diffraction intensity peak at said X-ray penetration depth of 0.3 mm and a half value width w 2 of the diffraction intensity peak at said X-ray penetration depth of 5 mm is equal to or lower than 400 arcsec.

18 . A method of manufacturing an epilayer-containing nitride crystal substrate according to claim 15 , comprising the steps of:
selecting, as said nitride crystal substrate, nitride crystal configured such that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of said crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of said crystal while satisfying X-ray diffraction conditions of said specific parallel crystal lattice plane, a uniform distortion at a surface layer of said crystal represented by a value of |d 1 −d 2 |/d 2 obtained from said plane spacing d 1 at said X-ray penetration depth of 0.3 mm and said plane spacing d 2 at the X-ray penetration depth of 5 mm is equal to or lower than 2.1×10 −3 ; and epitaxially growing one or more semiconductor layer(s) on at least one of main surface sides of said substrate.

19 . A method of manufacturing an epilayer-containing nitride crystal substrate according to claim 15 , comprising the steps of:
selecting, as said nitride crystal substrate, nitride crystal configured such that, on a diffraction intensity profile of arbitrary specific parallel crystal lattice planes of the crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of said crystal while X-ray diffraction conditions of said specific parallel crystal lattice planes being satisfied, an irregular distortion at a surface layer of said crystal represented by a value of |v 1 −v 2 | obtained from a half value width v 1 of a diffraction intensity peak at the X-ray penetration depth of 0.3 mm and a half value width v 2 of the diffraction intensity peak at the X-ray penetration depth of 5 mm is equal to or lower than 150 arcsec; and epitaxially growing one or more semiconductor layer(s) on at least one of main surface sides of said substrate.

20 . A method of manufacturing an epilayer-containing nitride crystal substrate according to claim 17 , comprising the steps of:
selecting, as said nitride crystal substrate, nitride crystal configured such that, on a rocking curve measured by varying an X-ray penetration depth from a surface of said nitride crystal in connection with X-ray diffraction of arbitrary specific parallel crystal lattice planes of said crystal, a plane orientation deviation of said specific parallel crystal lattice planes represented by a value of |w 1 −w 2 | obtained from a half value width w 1 of a diffraction intensity peak at said X-ray penetration depth of 0.3 mm and a half value width w 2 of the diffraction intensity peak at said X-ray penetration depth of 5 mm is equal to or lower than 400 arcsec; and epitaxially growing one or more semiconductor layer(s) on at least one of main surface sides of said substrate.

Assignees

• Sumitomo Electric Industries

Inventors

• Ishibashi Keiji
• Kaji Tokiko
• Nakahata Seiji
• Nishiura Takayuki

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2908

  Nitrides · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title