Method for recycling indium

US9797027B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9797027-B2
Application numberUS-201514795148-A
CountryUS
Kind codeB2
Filing dateJul 9, 2015
Priority dateMar 18, 2015
Publication dateOct 24, 2017
Grant dateOct 24, 2017

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  1. Title

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a method for recycling indium from a panel on which an electrode layer made of indium tin oxide (ITO) is formed, comprising: S1 —removing each of pattern layers on the panel to obtain particles formed by the pattern layers; S2 —adding an acid solution to the particles so as to dissolve the substances which can be dissolved in the acid solution, and then filtering to give a solution containing indium ion; S3 —adding an alkaline solution to the solution obtained in step S2, so that metal ions other than indium ion can form precipitates with hydroxyl ion; S4 —filtering off the precipitates formed in step S3; and S5 —evaporating the solution obtained in step S4 to obtain crystals of indium salt. The method improves the reusing rate of the defective panels, is helpful to environment protection, and saves resources.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for recycling indium from a panel on which an electrode layer made of indium tin oxide (ITO) is formed, comprising: S1—removing each of pattern layers on the panel to obtain particles formed by the pattern layers; S2—adding an acid solution to the particles so as to dissolve the substances which can be dissolved in the acid solution, and then filtering to give a solution containing indium ion; S3—adding an alkaline solution to the solution obtained in step S2, so that metal ions other than indium ion can form precipitates with hydroxyl ion; S4—filtering off the precipitates formed in step S3; and S5—evaporating the solution obtained in step S4 to obtain crystals of indium salt; wherein the alkaline solution in step S3 is aqueous ammonia, and the acid solution in step S2 is a hydrochloric acid solution and the indium salt obtained in step S5 is indium chloride. 2. The method according to claim 1 , wherein it further comprises: S6—reducing the indium salt to obtain metal indium. 3. The method according to claim 2 , wherein, in step S1, a mixture of water and particles formed by said pattern layers is obtained by polishing the panel while washing the panel with water; and in step S2, and the acid solution is added into the mixture of water and particles formed by said pattern layers. 4. The method according to claim 2 , wherein the panel is a touch screen panel. 5. The method according to claim 1 , wherein step S5 comprises: S5-1: evaporating the solution obtained in step S4 to give crystals comprising ammonium chloride and indium chloride; and S5-2: heating the obtained crystals so that ammonium chloride in the crystals decomposes into hydrogen chloride and ammonia gas, thereby separating indium chloride from ammonium chloride. 6. The method according to claim 5 , wherein the heating temperature in step S5-2 is 250-350° C. 7. The method according to claim 6 , wherein, in step S1, a mixture of water and particles formed by said pattern layers is obtained by polishing the panel while washing the panel with water; and in step S2, and the acid solution is added into the mixture of water and particles formed by said pattern layers. 8. The method according to claim 6 , wherein the panel is a touch screen panel. 9. The method according to claim 5 , wherein step S5 further comprises: S5-3: introducing hydrogen chloride and ammonia gas obtained in step S5-2 into a cooling chamber so that hydrogen chloride and ammonia gas can re-crystallize into ammonium chloride. 10. The method according to claim 9 , wherein the alkaline solution used in step S3 is prepared from the ammonium chloride obtained in step S5-3. 11. The method according to claim 5 , wherein, in step S1, a mixture of water and particles formed by said pattern layers is obtained by polishing the panel while washing the panel with water; and in step S2, and the acid solution is added into the mixture of water and particles formed by said pattern layers. 12. The method according to claim 5 , wherein the panel is a touch screen panel. 13. The method according to claim 1 , wherein, in step S1, a mixture of water and particles formed by said pattern layers is obtained by polishing the panel while washing the panel with water; and in step S2, and the acid solution is added into the mixture of water and particles formed by said pattern layers. 14. The method according to claim 1 , wherein the panel is a touch screen panel.

Assignees

Inventors

Classifications

  • Preliminary treatment of scrap (C22B1/02 - C22B1/26 take precedence) · CPC title

  • C22B58/00Primary

    Obtaining gallium or indium {(treatment or purification of solutions by liquid-liquid extraction, by ion-exchange or by adsorption C22B3/20)} · CPC title

  • Wet processes · CPC title

  • Cross-Sectional Technologies · mapped topic

  • Compounds of gallium, indium or thallium · CPC title

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What does patent US9797027B2 cover?
Provided is a method for recycling indium from a panel on which an electrode layer made of indium tin oxide (ITO) is formed, comprising: S1 —removing each of pattern layers on the panel to obtain particles formed by the pattern layers; S2 —adding an acid solution to the particles so as to dissolve the substances which can be dissolved in the acid solution, and then filtering to give …
Who is the assignee on this patent?
Boe Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd, Heifei Xinsheng Optoelectronics Tech Ltd
What technology area does this patent fall under?
Primary CPC classification C22B58/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).